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AS7C4096A-12TCN PDF预览

AS7C4096A-12TCN

更新时间: 2024-02-02 15:27:09
品牌 Logo 应用领域
ALSC 存储内存集成电路静态存储器光电二极管ISM频段PC
页数 文件大小 规格书
10页 325K
描述
5.0V 512K x 8 CMOS SRAM

AS7C4096A-12TCN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2,针数:44
Reach Compliance Code:compliantFactory Lead Time:8 weeks
风险等级:5.68最长访问时间:12 ns
JESD-30 代码:R-PDSO-G44长度:18.415 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:44字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

AS7C4096A-12TCN 数据手册

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AS7C4096A  
®
Functional description  
The AS7C4096A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as  
524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are  
desired.  
Equal address access and cycle times (t , t , t ) of 10/12/15/20 ns with output enable access times (t ) of 5/6 ns are ideal  
AA RC WC  
OE  
for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory  
systems.  
When CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS  
standby mode.  
A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O8 is written  
on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins  
only after outputs have been disabled with output enable (OE) or write enable (WE).  
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip  
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write  
enable is active, output drivers stay in high-impedance mode.  
All chip inputs and outputs are TTL-compatible, and operation is from a single 5.0V supply voltage. This device is available as  
per industry standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages.  
Absolute maximum ratings  
Parameter  
Symbol  
Min  
–0.5  
–0.5  
Max  
Unit  
V
Voltage on V relative to GND  
V
V
+7.0  
CC  
t1  
t2  
D
Voltage on any pin relative to GND  
Power dissipation  
V
+0.5  
V
CC  
P
T
1.0  
W
Storage temperature (plastic)  
–65  
–55  
+150  
+125  
20  
°C  
°C  
mA  
stg  
Temperature with V applied  
T
CC  
bias  
DC current into output (low)  
I
OUT  
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func-  
tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to  
absolute maximum rating conditions for extended periods may affect reliability.  
Truth table  
CE  
WE  
OE  
Data  
Mode  
Standby (I , I  
)
H
X
X
High Z  
SB SB1  
Output disable (I  
)
L
L
L
H
H
L
H
L
High Z  
CC  
D
Read (I  
)
OUT  
CC  
D
Write (I  
)
CC  
X
IN  
5/27/05, v. 1.1  
Alliance Semiconductor  
P. 2 of 10  

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