Datasheet > AS7C3513A-15TC

AS7C3513A-15TC

更新时间： 2024-09-30 23:31:47

品牌	Logo	应用领域
其他 - ETC		静态存储器
页数	文件大小	规格书
10页	201K
描述
IC-SMD-SRAM 512K

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中文翻译

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数据手册

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AS7C3513A-15TC 数据手册

May 2001

AS7C513

AS7C3513

5V/3.3V 32K×16 CMOS SRAM

Features

• AS7C513 (5V version)

• AS7C3513 (3.3V version)

• Low power consumption: STANDBY

- 28 mW (AS7C513) / max CMOS

- 18 mW (AS7C3513) / max CMOS

• Easy memory expansion with CE, OE inputs

• TTL-compatible, three-state I/O

• 44-pin JEDEC standard package

- 400 mil SOJ

- 400 mil TSOP 2

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA

• Industrial and commercial temperature

• Organization: 32,768 words × 16 bits

• Center power and ground pins

• High speed

- 12/15/20 ns address access time

- 6, 7, 8 ns output enable access time

• Low power consumption: ACTIVE

- 800 mW (AS7C513) / max @ 12 ns

- 432 mW (AS7C3513) / max @ 12 ns

Logic block diagram

Pin arrangement

44-Pin SOJ, TSOP 2 (400 mil)

32K × 16

Array

GND

I/O0

I/O1

I/O2

I/O3

I/O15

I/O14

I/O13

I/O12

GND

I/O0–I/O7

I/O

buffer

Control circuit

I/O8–I/O15

GND

I/O4

I/O5

I/O6

I/O7

A14

A13

A12

A11

Column decoder

I/O11

I/O10

I/O9

I/O8

A10

Selection guide

AS7C513-12

AS7C513-15

AS7C513-20

AS7C3513-12

AS7C3513-15

AS7C3513-20

Unit

Maximum address access time

Maximum output enable access time

AS7C513

AS7C3513

AS7C513

AS7C3513

160

120

150

110

140

100

Maximum operating current

Maximum CMOS standby current

5/17/01; v.1.1

Alliance Semiconductor

P. 1 of 10

12 3 4 5 6 7...10

中文翻译

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