5秒后页面跳转
AS7C33256PFS32A-166TQIN PDF预览

AS7C33256PFS32A-166TQIN

更新时间: 2024-01-04 06:45:27
品牌 Logo 应用领域
ALSC 存储内存集成电路静态存储器
页数 文件大小 规格书
20页 528K
描述
3.3V 256K x 32/36 pipelined burst synchronous SRAM

AS7C33256PFS32A-166TQIN 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP,
针数:100Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.35最长访问时间:9 ns
其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTUREJESD-30 代码:R-PQFP-G100
JESD-609代码:e3长度:20 mm
内存密度:8388608 bit内存集成电路类型:STANDARD SRAM
内存宽度:32功能数量:1
端子数量:100字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX32封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):245认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

AS7C33256PFS32A-166TQIN 数据手册

 浏览型号AS7C33256PFS32A-166TQIN的Datasheet PDF文件第5页浏览型号AS7C33256PFS32A-166TQIN的Datasheet PDF文件第6页浏览型号AS7C33256PFS32A-166TQIN的Datasheet PDF文件第7页浏览型号AS7C33256PFS32A-166TQIN的Datasheet PDF文件第9页浏览型号AS7C33256PFS32A-166TQIN的Datasheet PDF文件第10页浏览型号AS7C33256PFS32A-166TQIN的Datasheet PDF文件第11页 
AS7C33256PFS32A  
AS7C33256PFS36A  
®
*
Absolute maximum ratings  
Parameter  
Symbol  
, V  
Min  
–0.5  
–0.5  
–0.5  
Max  
Unit  
V
Power supply voltage relative to GND  
Input voltage relative to GND (input pins)  
Input voltage relative to GND (I/O pins)  
Power dissipation  
V
+4.6  
DD  
DDQ  
V
V
+ 0.5  
DD  
V
IN  
IN  
V
V
+ 0.5  
V
DDQ  
P
1.8  
W
D
Short circuit output current  
I
50  
mA  
OUT  
o
Storage temperature (plastic)  
Temperature under bias  
T
–65  
–65  
+150  
+135  
C
stg  
o
T
C
bias  
*Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at  
these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect reli-  
ability.  
Recommended operating conditions at 3.3V I/O  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
VDD  
Min  
3.135  
3.135  
0
Nominal  
Max  
3.465  
3.465  
0
Unit  
V
3.3  
3.3  
0
VDDQ  
Vss  
V
V
Recommended operating conditions at 2.5V I/O  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
VDD  
Min  
3.135  
2.375  
0
Nominal  
Max  
3.465  
2.625  
0
Unit  
V
3.3  
2.5  
0
VDDQ  
Vss  
V
V
11/30/04, v.3.1  
Alliance Semiconductor  
P. 8 of 20  

与AS7C33256PFS32A-166TQIN相关器件

型号 品牌 获取价格 描述 数据表
AS7C33256PFS32A2-100BC ISSI

获取价格

SRAM
AS7C33256PFS32A2-100TQC ISSI

获取价格

Standard SRAM, 256KX32, 12ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
AS7C33256PFS32A2-100TQI ISSI

获取价格

Standard SRAM, 256KX32, 12ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
AS7C33256PFS32A2-133BC ISSI

获取价格

SRAM
AS7C33256PFS32A2-133BI ISSI

获取价格

SRAM
AS7C33256PFS32A2-133TQC ISSI

获取价格

Standard SRAM, 256KX32, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
AS7C33256PFS32A2-133TQI ISSI

获取价格

Standard SRAM, 256KX32, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
AS7C33256PFS32A2-150BI ISSI

获取价格

SRAM
AS7C33256PFS32A2-150TQC ISSI

获取价格

Standard SRAM, 256KX32, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
AS7C33256PFS32A2-150TQI ISSI

获取价格

Standard SRAM, 256KX32, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100