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AS7C31024-15TC PDF预览

AS7C31024-15TC

更新时间: 2024-01-17 10:00:59
品牌 Logo 应用领域
ALSC 静态存储器
页数 文件大小 规格书
9页 199K
描述
5V/3.3V 128K x 8 CMOS SRAM (Evolutionary Pinout)

AS7C31024-15TC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP32,.3
针数:32Reach Compliance Code:unknown
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.72最长访问时间:15 ns
I/O 类型:COMMONJESD-30 代码:R-PDIP-T32
JESD-609代码:e0内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP32,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
最大待机电流:0.0005 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.07 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

AS7C31024-15TC 数据手册

 浏览型号AS7C31024-15TC的Datasheet PDF文件第1页浏览型号AS7C31024-15TC的Datasheet PDF文件第2页浏览型号AS7C31024-15TC的Datasheet PDF文件第4页浏览型号AS7C31024-15TC的Datasheet PDF文件第5页浏览型号AS7C31024-15TC的Datasheet PDF文件第6页浏览型号AS7C31024-15TC的Datasheet PDF文件第7页 
AS7C1024  
AS7C31024  
®
Recommended operating conditions  
Parameter  
Device  
Symbol  
VCC  
Min  
4.5  
3.0  
2.2  
2.0  
–0.5  
0
Nominal  
Max  
5.5  
Unit  
V
AS7C1024  
AS7C31024  
AS7C1024  
AS7C31024  
5.0  
3.3  
Supply voltage  
VCC  
3.6  
V
V
VCC + 0.5  
VCC + 0.5  
0.8  
V
IH  
Input voltage  
V
V
IH  
V
V
IL  
commercial  
industrial  
TA  
TA  
70  
°C  
°C  
Ambient operating temperature  
–40  
85  
V min = –3.0V for pulse width less than t  
IL  
.
RC/ 2  
DC operating characteristics (over the operating range)  
-10  
-12  
-15  
-20  
Unit  
Parameter  
Sym  
Test conditions  
Device  
Min Max Min Max Min Max Min Max  
Input leakage  
current  
| ILI| VCC = Max, VIN = GND to VCC  
1
1
1
1
1
1
1
1
µA  
µA  
Output leakage  
current  
VCC = Max, CE1 = VIH or  
| ILO|  
CE2 = V , VOUT = GND to V  
IL  
CC  
Operating  
power supply  
current  
VCC = Max, CE1 = V ,  
AS7C1024  
150  
100  
80  
140  
90  
75  
50  
10  
10  
125  
80  
65  
40  
10  
10  
110  
75  
60  
35  
15  
15  
IL  
ICC CE2 = V , f = fMax, IOUT = 0  
mA  
mA  
mA  
IH  
AS7C31024  
mA  
VCC = Max, CE1 VIH and/ or AS7C1024  
ISB CE2 V , V = VIH or V ,  
IL IN  
IL  
AS7C31024  
60  
f = fMax, IOUT = 0mA  
Standby power  
supply current  
VCC = Max, CE1 VCC–0.2V AS7C1024  
V GND + 0.2V or  
10  
ISB1  
IN  
AS7C31024  
10  
V VCC –0.2V, f = 0  
IN  
V
IOL = 8 mA, VCC = Min  
0.4  
0.4  
0.4  
0.4  
V
V
OL  
Output voltage  
V
IOH = –4 mA, VCC = Min  
2.4  
2.4  
2.4  
2.4  
OH  
Shaded areas contain advance information.  
Capacitance (f = 1 MHz, T = 25 °C, V = NOMINAL)  
a
CC  
Symbol  
Parameter  
Signals  
Test conditions  
IN = 0V  
VIN = VOUT = 0V  
Max  
Unit  
Input capacitance  
I/ O capacitance  
C
A, CE1, CE2, WE, OE  
I/ O  
V
5
7
pF  
pF  
IN  
C
I/ O  
11/ 29/ 00  
ALLIANCE SEMICONDUCTOR  
3

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