Datasheet > AS50N06S

AS50N06S

更新时间： 2024-10-02 18:06:59

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AS50N06S 数据手册

AS50N06S

N-Channel Enhancement Mode MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

I_D

7.5mΩ@10V

8.8mΩ@4.5V

60V

50A

Feature

Application



High density cell design for ultra low Rdson

High Speed switching



DC/DC converter

Ideal for high-frequency switching and synchronous

rectification

Package

Circuit diagram

DFN3.3X3.3-8L

Marking

50N06

XXXXX

Document ID

AS-3150353

Issued Date

2013/03/03

Revised Date

2019/05/16

Revision

Page.

Page 1

12 3 4 5

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型号	品牌	获取价格	描述	数据表
AS50N06S-Q1	ANBON	获取价格	DFN3.3*3.3-8L
AS50-R10K	ALLIED	获取价格	General Purpose Inductor, 0.1uH, 10%, 1 Element, AXIAL LEADED
AS50-R10K-RC	ALLIED	获取价格	Axial Shielded Inductors
AS50-R10K-RC_10	ALLIED	获取价格	Axial Shielded Inductors
AS50-R10K-RC-TR	ALLIED	获取价格	General Purpose Inductor, 0.1uH, 10%, 1 Element, AXIAL LEADED, ROHS COMPLIANT
AS50-R12K	ALLIED	获取价格	General Purpose Inductor, 0.12uH, 10%, 1 Element, AXIAL LEADED
AS50-R12K-RC	ALLIED	获取价格	Axial Shielded Inductors
AS50-R12K-RC-TR	ALLIED	获取价格	General Purpose Inductor, 0.12uH, 10%, 1 Element, AXIAL LEADED, ROHS COMPLIANT
AS50-R15K	ALLIED	获取价格	General Purpose Inductor, 0.15uH, 10%, 1 Element, AXIAL LEADED
AS50-R15K-RC	ALLIED	获取价格	Axial Shielded Inductors