Datasheet > 存储 > DRAM> AS4C4M4F1-60TC

AS4C4M4F1-60TC

更新时间： 2024-02-11 16:36:52

品牌	Logo	应用领域
ALSC		存储内存集成电路光电二极管动态存储器
页数	文件大小	规格书
18页	271K
描述
5V 4M×4 CMOS DRAM (Fast Page mode)

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技术参数
数据手册

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AS4C4M4F1-60TC 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	SOP, TSOP24/26,.36
针数：	26/24	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.02
风险等级：	5.9	Is Samacsys：	N
访问模式：	FAST PAGE	最长访问时间：	60 ns
其他特性：	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	I/O 类型：	COMMON
JESD-30 代码：	R-PDSO-G24	JESD-609代码：	e0
内存密度：	16777216 bit	内存集成电路类型：	FAST PAGE DRAM
内存宽度：	4	功能数量：	1
端口数量：	1	端子数量：	24
字数：	4194304 words	字数代码：	4000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	4MX4
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	TSOP24/26,.36
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	240	电源：	5 V
认证状态：	Not Qualified	刷新周期：	2048
自我刷新：	YES	最大待机电流：	0.001 A
子类别：	DRAMs	最大压摆率：	0.12 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

AS4C4M4F1-60TC 数据手册

AS4C4M4F0

AS4C4M4F1

Functional description

The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as

4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high

speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for

use as main memory in PC, workstation, router and switch applications.

These devices feature a high speed page mode operation where read and write operations within a single row (or page) can be executed at

very high speed by toggling column addresses within that row. Row and column addresses are alternately latched into input buffers using the

falling edge of RAS and CAS inputs respectively. Also, RAS is used to make the column address latch transparent, enabling application of

column addresses prior to CAS assertion.

Refresh on the 4096 address combinations of A0 to A11 must be performed every 64 ms using:

• RAS-only refresh: RAS is asserted while CAS is held high. Each of the 4096 rows must be strobed. Outputs remain high impedence.

• Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with

previous valid data.

• CAS-before-RAS refresh (CBR): CAS is asserted prior to RAS. Refresh address is generated internally.

Outputs are high-impedence (OE and WE are don't care).

• Normal read or write cycles refresh the row being accessed.

• Self-refresh cycles

Refresh on the 2048 address combinations of A0 to A10 must be performed every 32 ms using:

• RAS-only refresh: RAS is asserted while CAS is held high. Each of the 2048 rows must be strobed. Outputs remain high impedence.

• Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with

previous valid data.

• CAS-before-RAS refresh (CBR): CAS is asserted prior to RAS. Refresh address is generated internally.

Outputs are high-impedence (OE and WE are don't care).

• Normal read or write cycles refresh the row being accessed.

• Self-refresh cycles

The AS4C4M4F0 and AS4C4M4F1 are available in the standard 24/26-pin plastic SOJ and 24/26-pin plastic TSOP packages. The

AS4C4M4F0 and AS4C4M4F1 operate with a single power supply of 5V 0.5V and provide TTL compatible inputs and outputs.

Logic block diagram for 4K refresh

Data

I/O

buffers

V_CC

Column decoder

Sense amp

GND

I/O0 to I/O3

RAS clock

generator

RAS

CAS

4096 × 1024 × 4

Array

CAS clock

generator

(16,777,216)

A10

A11

WE clock

generator

4/11/01; v.0.9

Alliance Semiconductor

P. 2 of 18

123 4 5 6 7...18

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与AS4C4M4F1-60TC相关器件

型号	品牌	描述	获取价格	数据表
AS4C4M4F1-60TI	ALSC	5V 4M×4 CMOS DRAM (Fast Page mode)	获取价格
AS4C4M4F1Q-50JC	ALSC	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28	获取价格
AS4C4M4F1Q-50TC	ALSC	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP-28	获取价格
AS4C4M4F1Q-60JC	ETC	x4 Fast Page Mode DRAM	获取价格
AS4C4M4F1Q-60TC	ETC	DRAM\|FAST PAGE\|4MX4\|CMOS\|TSOP\|28PIN\|PLASTIC	获取价格
AS4C512M8D3	ALSC	Fully synchronous operation	获取价格

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