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AS4C1M16E5-50JC PDF预览

AS4C1M16E5-50JC

更新时间: 2024-01-13 23:06:29
品牌 Logo 应用领域
ALSC 动态存储器
页数 文件大小 规格书
22页 601K
描述
5V 1M×16 CMOS DRAM (EDO)

AS4C1M16E5-50JC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP44/50,.46,32
针数:50Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.24访问模式:FAST PAGE WITH EDO
最长访问时间:50 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:20.95 mm
内存密度:16777216 bit内存集成电路类型:EDO DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:44
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44/50,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
电源:5 V认证状态:Not Qualified
刷新周期:1024座面最大高度:1.2 mm
自我刷新:YES最大待机电流:0.001 A
子类别:DRAMs最大压摆率:0.145 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

AS4C1M16E5-50JC 数据手册

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AS4C1M16E5  
®
AS4C1M16E5 ordering information  
Package \ RAS access time  
45 ns  
50 ns  
60 ns  
AS4C1M16E5-50JC  
AS4C1M16E5-50JI  
AS4C1M16E5-60JC  
AS4C1M16E5-60JI  
Plastic SOJ, 400 mil, 42-pin  
AS4C1M16E5-45JC  
AS4C1M16E5-50TC  
AS4C1M16E5-50TI  
AS4C1M16E5-60TC  
AS4C1M16E5-60TI  
TSOP II, 400 mil, 44/50-pin  
AS4C1M16E5-45TC  
AS4C1M16E5 part numbering system  
AS4  
C
1M16E5  
–XX  
X
X
C = 5V CMOS  
Package:  
Temperature range  
DRAM prefix  
LC = 3.3V CMOS  
Device number RAS access time J = 42-pin SOJ 400 mil  
C=Commercial, 0°C to 70 °C  
T = 44/50-pin TSOP II 400 mil I=Industrial, -40°C to 85°C  
4/11/01; v.1.0  
Alliance Semiconductor  
P. 22 of 22  
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rights, trademarks, or any other intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting systems where a malfunction or  
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