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ARS35MB0 PDF预览

ARS35MB0

更新时间: 2024-11-28 01:13:59
品牌 Logo 应用领域
TSC 二极管
页数 文件大小 规格书
4页 364K
描述
High Current Button Rectifiers

ARS35MB0 技术参数

生命周期:Obsolete包装说明:O-PEDB-N2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.68
Is Samacsys:N应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-PEDB-N2最大非重复峰值正向电流:500 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-50 °C最大输出电流:35 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:DISK BUTTON最大重复峰值反向电压:1000 V
最大反向电流:5 µA最大反向恢复时间:3 µs
表面贴装:YES端子形式:NO LEAD
端子位置:ENDBase Number Matches:1

ARS35MB0 数据手册

 浏览型号ARS35MB0的Datasheet PDF文件第2页浏览型号ARS35MB0的Datasheet PDF文件第3页浏览型号ARS35MB0的Datasheet PDF文件第4页 
ARS35A thru ARS35M  
Taiwan Semiconductor  
CREAT BY ART  
High Current Button Rectifiers  
FEATURES  
- Diffused junction  
- Low leakage  
- High surge capability  
- Low cost construction utilizing void-free molded plastic technique  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
ARS  
Case: ARS  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
Weight: 1.68 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
ARS ARS ARS ARS ARS ARS ARS  
35A 35B 35D 35G 35J 35K 35M  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
200  
140  
200  
400  
280  
400  
35  
600  
420  
600  
800  
560  
800  
1000  
V
V
V
A
70  
700  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
IF(AV)  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
500  
1.0  
A
V
Maximum instantaneous forward voltage (Note 1)  
@ 35 A  
VF  
Maximum reverse current @ Rated VR TJ=25 oC  
TJ=125 oC  
5
IR  
μA  
250  
Typical reverse recovery time (Note 2)  
Typical junction capacitance (Note 3)  
Typical Thermal Resistance  
3
300  
trr  
μs  
pF  
OC/W  
OC  
Cj  
RθJC  
TJ  
1
Operating junction temperature range  
Storage temperature range  
- 50 to +175  
- 50 to +175  
OC  
TSTG  
Note 1: Pulse test with PW=300μs, 1% duty cycle  
Note 2: Reverse Recovery Time Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.  
Document Number: DS_D1409006  
Version: D14  

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