Datasheet > ARF771LTS45

ARF771LTS45

更新时间： 2024-11-22 22:31:35

品牌	Logo	应用领域
POSEICO		二极管快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	107K
描述
FAST RECOVERY DIODE

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中文翻译

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数据手册

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ARF771LTS45 数据手册

POSEICO SPA

Via N. Lorenzi 8, 16152 Genova - ITALY

Tel. +39 010 6556234 - Fax +39 010 6557519

Sales Office:

POSEICO

POSEICO SPA

POwer SEmiconductors Italian COrporation

Tel. +39 010 6556775 - Fax +39 010 6442510

FAST RECOVERY DIODE

FOR IGBT,IEGT,GCT APPLICATIONS

SNUBBERLESS OPERATION

ARF771LT

Repetitive voltage up to

Mean forward current

Surge current

4500 V

1730 A

28 kA

LOW LOSSES SOFT RECOVERY

TARGET SPECIFICATION

mar 03 - ISSUE : 2

Symbol

Characteristic

Conditions

Value

Unit

[°C]

BLOCKING

RRM

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Repetitive peak reverse current

Permanent DC voltage

140

4500

4600

150

RSM

RRM

V=VRRM

DC LINK

2800

CONDUCTING

F (AV)

FSM

Mean forward current

180° sin ,50 Hz, Th=55°C, double side cooled

180° square,50 Hz,Th=55°C,double side cooled

1730

1790

Mean forward current

Surge forward current

I² t

Sine wave, 10 ms

reapplied reverse voltage up to 50% VRSM

140

I² t

3920 x1E3

3.95

A²s

F(TO)

Forward voltage

Threshold voltage

Forward slope resistance

Forward current = =2500 A

140

1.95

0.800

mohm

SWITCHING

Reverse recovery charge

I F = 2500 A

VR = 100 V

di/dt=

250 A/µs

140

2400

µC

Peak reverse recovery current

Reverse recovery time

I F = 2500 A

di/dt= 1000 A/µs

VR = 2800 V

µs

µC

Reverse recovery charge

Peak reverse recovery current

Softness (s-factor), min

3500

1500

140

OFF

Turn off energy dissipation

Peak forward recovery

di/dt=

500 A/µs

MOUNTING

th(j-h)

th(c-h)

Thermal impedance

Junction to heatsink, double side cooled

Case to heatsink, double side cooled

9.5

°C/kW

°C

Thermal impedance

Operating junction temperature

Mounting force

-30 / 140

46.0

1150

/ 54.0

Mass

ORDERING INFORMATION : ARF771LT S 45

VRRM/100

standard specification

中文翻译

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