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AQ1A4A-AZ PDF预览

AQ1A4A-AZ

更新时间: 2024-01-07 12:08:46
品牌 Logo 应用领域
日电电子 - NEC 开关晶体管
页数 文件大小 规格书
6页 124K
描述
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43B, 3 PIN

AQ1A4A-AZ 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:20 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AQ1A4A-AZ 数据手册

 浏览型号AQ1A4A-AZ的Datasheet PDF文件第1页浏览型号AQ1A4A-AZ的Datasheet PDF文件第3页浏览型号AQ1A4A-AZ的Datasheet PDF文件第4页浏览型号AQ1A4A-AZ的Datasheet PDF文件第5页浏览型号AQ1A4A-AZ的Datasheet PDF文件第6页 
AQ1 SERIES  
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Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 20 V, IE = 0  
MIN.  
TYP.  
MAX.  
100  
Unit  
nA  
VCE = 2.0 V, IC = 0.1 A  
VCE = 2.0 V, IC = 1.0 A  
VCE = 2.0 V, IC = 2.0 A  
IC = 5.0 A, IC = 0.7 A  
VCE = 5.0 V, IC = 100 µA  
hFE1 **  
hFE2 **  
hFE3 **  
VCE(sat) **  
VIL **  
R1  
50  
150  
50  
DC current gain  
DC current gain  
0.55  
0.3  
611  
Low level output voltage  
Low level input voltage  
Input resistance  
V
V
329  
0.7  
470  
1.0  
kΩ  
E-to-B resistance  
R2  
1.3  
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ꢁꢂꢃꢁꢓꢔ  
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Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 20 V, IE = 0  
MIN.  
TYP.  
MAX.  
Unit  
nA  
100  
VCE = 2.0 V, IC = 0.1 A  
VCE = 2.0 V, IC = 1.0 A  
VCE = 2.0 V, IC = 2.0 A  
IC = 5.0 A, IC = 0.5 A  
VCE = 5.0 V, IC = 100 µA  
hFE1 **  
hFE2 **  
hFE3 **  
VOL **  
VIL **  
R1  
50  
150  
50  
DC current gain  
DC current gain  
0.4  
0.3  
1.3  
Low level output voltage  
Low level input voltage  
Input resistance  
V
V
kΩ  
kΩ  
0.7  
0.7  
1.0  
1.0  
E-to-B resistance  
R2  
1.3  
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ꢁꢂꢃꢕꢓꢔ  
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Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 20 V, IE = 0  
MIN.  
TYP.  
MAX.  
100  
Unit  
nA  
VCE = 2.0 V, IC = 0.1 A  
VCE = 2.0 V, IC = 1.0 A  
VCE = 2.0 V, IC = 2.0 A  
IC = 5.0 A, IC = 0.3 A  
VCE = 5.0 V, IC = 100 µA  
hFE1 **  
hFE2 **  
hFE3 **  
VOL **  
VIL **  
R1  
80  
150  
50  
DC current gain  
DC current gain  
0.3  
0.3  
2.86  
2.86  
Low level output voltage  
Low level input voltage  
Input resistance  
V
V
kΩ  
kΩ  
1.54  
1.54  
2.2  
2.2  
E-to-B resistance  
R2  
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