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AQ1F3P

更新时间: 2024-11-01 22:05:47
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管开关
页数 文件大小 规格书
6页 105K
描述
on-chip resistor NPN silicon epitaxial transistor

AQ1F3P 数据手册

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DATA SHEET  
COMPOUND TRANSISTOR  
AQ1 SERIES  
on-chip resistor NPN silicon epitaxial transistor  
For mid-speed switching  
PACKAGE DRAWING (UNIT: mm)  
FEATURES  
High current drives such as IC and motor solenoid available up  
to 2 A  
On-chip bias resistor  
Low power consumption during drive  
AQ1 SERIES LISTS  
R1 (K)  
R2 (K)  
1.0  
Products  
AQ1L2N  
AQ1A3M  
AQ1F3M  
AQ1F3P  
AQ1L2Q  
AQ1F2Q  
AQ1A4A  
0.47  
1.0  
2.2  
2.2  
0.47  
0.22  
1.0  
2.2  
Electrode Connection  
10  
1. Emitter  
2. Collector JEDEC: TO-92  
3. Base IEC : PA33  
EIAJ : SC-43B  
4.7  
2.2  
10  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (Pulse)  
Base current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse) *  
IB(DC)  
PT  
Ratings  
20  
Unit  
V
20  
V
10  
V
2.0  
A
3.0  
A
0.04  
750  
A
Total power dissipation  
Junction temperature  
mW  
°C  
°C  
Tj  
150  
55 to +150  
Storage temperature  
Tstg  
* PW 10 ms, duty cycle 50 %  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D10840EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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