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AQ1F3M

更新时间: 2024-02-22 13:56:24
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
6页 105K
描述
on-chip resistor NPN silicon epitaxial transistor

AQ1F3M 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.54最大集电极电流 (IC):2 A
集电极-发射极最大电压:20 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AQ1F3M 数据手册

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DATA SHEET  
COMPOUND TRANSISTOR  
AQ1 SERIES  
on-chip resistor NPN silicon epitaxial transistor  
For mid-speed switching  
PACKAGE DRAWING (UNIT: mm)  
FEATURES  
High current drives such as IC and motor solenoid available up  
to 2 A  
On-chip bias resistor  
Low power consumption during drive  
AQ1 SERIES LISTS  
R1 (K)  
R2 (K)  
1.0  
Products  
AQ1L2N  
AQ1A3M  
AQ1F3M  
AQ1F3P  
AQ1L2Q  
AQ1F2Q  
AQ1A4A  
0.47  
1.0  
2.2  
2.2  
0.47  
0.22  
1.0  
2.2  
Electrode Connection  
10  
1. Emitter  
2. Collector JEDEC: TO-92  
3. Base IEC : PA33  
EIAJ : SC-43B  
4.7  
2.2  
10  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (Pulse)  
Base current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse) *  
IB(DC)  
PT  
Ratings  
20  
Unit  
V
20  
V
10  
V
2.0  
A
3.0  
A
0.04  
750  
A
Total power dissipation  
Junction temperature  
mW  
°C  
°C  
Tj  
150  
55 to +150  
Storage temperature  
Tstg  
* PW 10 ms, duty cycle 50 %  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D10840EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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