Datasheet > APTGT300H60G-Module

APTGT300H60G-Module

更新时间： 2024-09-28 14:55:31

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	431K
描述
Configuration: Full bridgeVCES (V): 600VCESat (V): 1.4Current (A) Tc=80C: 300Silicon type: TRENCH 3 IGBT Package: SP6C

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APTGT300H60G-Module 数据手册

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APTGT300H60G

V_CES= 600V

I_C= 300A @ Tc = 80°C

Full - Bridge

Trench + Field Stop IGBT3

Power Module

Application

VBUS



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

OUT1 OUT2

Features



Trench + Field Stop IGBT3 Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated

0/VBUS



Kelvin emitter for easy drive

Very low stray inductance

Symmetrical design

M5 power connectors



High level of integration

Benefits



Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

Low profile

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

600

430

300

500

±20

1150

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

T_j= 150°C

RBSOA Reverse Bias Safe Operating Area

600A @ 550V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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