Datasheet > 晶体管 > IGBT> APT65GP60L2DF2

APT65GP60L2DF2

更新时间： 2024-02-18 21:12:16

品牌	Logo	应用领域
ADPOW		晶体晶体管功率控制瞄准线双极性晶体管
页数	文件大小	规格书
9页	201K
描述
POWER MOS 7 IGBT

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

APT65GP60L2DF2 技术参数

生命周期：	Active	零件包装代码：	TO-264MA
包装说明：	,	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.58
Is Samacsys：	N	最大集电极电流 (IC)：	100 A
集电极-发射极最大电压：	600 V	门极发射器阈值电压最大值：	6 V
门极-发射极最大电压：	20 V	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	833 W
子类别：	Insulated Gate BIP Transistors	表面贴装：	NO
Base Number Matches：	1

APT65GP60L2DF2 数据手册

APT65GP60L2DF2

DYNAMIC CHARACTERISTICS

Symbol Characteristic

Test Conditions

MIN

TYP

7400

580

MAX

UNIT

Input Capacitance

C_ies

C_oes

C_res

V_GEP

Q_g

Capacitance

V_GE= 0V, V_CE= 25V

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

7.5

Gate Charge

V_GE= 15V

Total Gate Charge

210

V_CE= 300V

Q_ge

Gate-Emitter Charge

I_C= 65A

Q_gc

Gate-Collector ("Miller") Charge

Safe Switching Operating Area

SSOA

T_J= 150°C, R_G= 5Ω, V_GE

250

15V, L = 100µH,V_CE= 600V

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

t_d(on)

t_r

t_d(off)

t_f

Inductive Switching (25°C)

V_CC= 400V

V_GE= 15V

I_C= 65A

_G= 5Ω

E_on1

E_on2

E_off

t_d(on)

t_r

Turn-on Switching Energy

605

1410

895

T_J= +25°C

Turn-on Switching Energy (Diode)

µJ

Turn-off Switching Energy

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Inductive Switching (125°C)

V_CC= 400V

V_GE= 15V

I_C= 65A

t_d(off)

t_f

130

_G= 5Ω

E_on1

E_on2

E_off

Turn-on Switching Energy

605

1925

1470

T_J= +125°C

Turn-on Switching Energy (Diode)

µJ

Turn-off Switching Energy

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic

MIN

TYP

MAX

UNIT

R_ΘJC

W_T

.15

.67

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

°C/W

6.10

Repetitive Rating: Pulse width limited by maximum junction temperature.

For Combi devices, I_cesincludes both IGBT and FRED leakages

See MIL-STD-750 Method 3471.

E_on1is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. (See Figure 24.)

E_on2is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. A Combi device is used for the clamping diode as shown in the E_on2test circuit. (See Figures 21, 22.)

E_offis the clamped inductive turn-off energy measured in accordance with JEDEC standard JEDS24-1. (See Figures 21, 23.)

Continuous current limited by package lead temperature.

APT Reserves the right to change, without notice, the specifications and information contained herein.

123 4 5 6 7...9

下载PDF

与APT65GP60L2DF2相关器件

型号	品牌	描述	获取价格	数据表
APT65GP60L2DQ2	ADPOW	POWER MOS 7 IGBT	获取价格
APT65GP60L2DQ2G	ADPOW	POWER MOS 7 IGBT	获取价格
APT66F60B2	MICROSEMI	N-Channel FREDFET	获取价格
APT66F60L	MICROSEMI	N-Channel FREDFET	获取价格
APT66M60B2	MICROSEMI	N-Channel MOSFET	获取价格
APT66M60B2_09	MICROSEMI	N-Channel MOSFET	获取价格