Insulated Gate Bipolar Transistors (IGBTs)
BVCES
Volts
VCE(ON)
Typ 25 C
IC2
Maximum IC
at Frequency
Package
Style
100oC
Part Number
O
15 kHz
16
33
30 kHz
10
Combi (IGBT & "DQ" FRED)
FAST
2.5
2.5
2.5
35
64
80
APT33GF120B2RDQ2G
APT50GF120JRDQ3
APT60GF120JRDQ3
T-MAX®
ISOTOP®
ISOTOP®
1200
17
20
s .04 4ECHNOLOGY
42
s 3HORT #IRCUIT 2ATED
s ,OW TO -ODERATE &REQꢆ
s ,OW #ONDUCTION ,OSS
s %ASY 0ARALLELING
50 kHz
23
14
41
28
17
80 kHz
Combi (IGBT & "DL" FRED)
2.8
2.8
2.2
2.2
2.2
50
30
50
45
25
16
9
31
22
APT50GS60BRDLG
APT30GS60BRDLG
APT50GP60LDL
APT30GP60B2DL
APT15GP60BDL
TO-247
TO-247
TO-264
T-MAX® or TO-264
TO-247
600
14
20 kHz
40 kHz
1200
3.2
3.2
50
100
28
17
APT50GT120B2RDL
APT100GT120JRDL
T-MAX®
ISOTOP®
40
21
TM
Power MOS 8 MOSFETs / FREDFETs
(fast body diode)
TM
Power MOS 8™ is Microsemi's latest family of high speed, high voltage (500-1200V)
N-channel switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These new MOSFETs / FREDFETs have been
optimized for both hard and soft switching in high frequency, high voltage applications rated
above 500W. There are 2 product types in the Power MOS 8™ MOSFET family:
1) MOSFET
2) FREDFETs have a fast recovery body diode characteristic, providing high commutation dv/dt
ruggedness and high reliability in ZVS circuits.
Features
s &AST SWITCHING
s ,OW %-)
s 1UIET SWITCHING
s !VALANCHE ENERGY RATED
s ,OW GATE CHARGE
s ,OWER COST
Applications
s 0OWER FACTOR CORRECTION
s 3ERVER AND TELECOM POWER SYSTEMS
s 3OLAR INVERTERS
s 3EMICONDUCTOR CAPITAL EQUIPMENT
s )NDUCTION HEATING
s !RC WELDING
s 0LASMA CUTTING
s "ATTERY CHARGERS
s -EDICAL
Quiet Switching
The new Power MOS 8™ series is a result of extensive research into quiet switching. Input and reverse transfer capaci-
tance values as well as their ratio were set at specific values to achieve quiet switching with minimal switching loss. The
Power MOS 8™ series of devices are inherently quiet switching, stable when connected in parallel, very efficient, and
lower cost than previous generations.
Body Diode Options
As with previous generation products, Power MOS 8™ MOSFETs and FREDFETs are available in all voltage ratings. A
FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due
to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available.
6