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APT64GA90B2D30 PDF预览

APT64GA90B2D30

更新时间: 2022-06-20 09:42:21
品牌 Logo 应用领域
美高森美 - MICROSEMI 半导体
页数 文件大小 规格书
44页 2833K
描述
Power Semiconductors Power Modules

APT64GA90B2D30 数据手册

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Insulated Gate Bipolar Transistors (IGBTs)  
BVCES  
Volts  
VCE(ON)  
Typ 25 C  
IC2  
Maximum IC  
at Frequency  
Package  
Style  
100oC  
Part Number  
O
15 kHz  
16  
33  
30 kHz  
10  
Combi (IGBT & "DQ" FRED)  
FAST  
2.5  
2.5  
2.5  
35  
64  
80  
APT33GF120B2RDQ2G  
APT50GF120JRDQ3  
APT60GF120JRDQ3  
T-MAX®  
ISOTOP®  
ISOTOP®  
1200  
17  
20  
s .04 4ECHNOLOGY  
42  
s 3HORT #IRCUIT 2ATED  
s ,OW TO -ODERATE &REQꢆ  
s ,OW #ONDUCTION ,OSS  
s %ASY 0ARALLELING  
50 kHz  
23  
14  
41  
28  
17  
80 kHz  
Combi (IGBT & "DL" FRED)  
2.8  
2.8  
2.2  
2.2  
2.2  
50  
30  
50  
45  
25  
16  
9
31  
22  
APT50GS60BRDLG  
APT30GS60BRDLG  
APT50GP60LDL  
APT30GP60B2DL  
APT15GP60BDL  
TO-247  
TO-247  
TO-264  
T-MAX® or TO-264  
TO-247  
600  
14  
20 kHz  
40 kHz  
1200  
3.2  
3.2  
50  
100  
28  
17  
APT50GT120B2RDL  
APT100GT120JRDL  
T-MAX®  
ISOTOP®  
40  
21  
TM  
Power MOS 8 MOSFETs / FREDFETs  
(fast body diode)  
TM  
Power MOS 8™ is Microsemi's latest family of high speed, high voltage (500-1200V)  
N-channel switch-mode power transistors with lower EMI characteristics and lower cost  
compared to previous generation devices. These new MOSFETs / FREDFETs have been  
optimized for both hard and soft switching in high frequency, high voltage applications rated  
above 500W. There are 2 product types in the Power MOS 8™ MOSFET family:  
1) MOSFET  
2) FREDFETs have a fast recovery body diode characteristic, providing high commutation dv/dt  
ruggedness and high reliability in ZVS circuits.  
Features  
s &AST SWITCHING  
s ,OW %-)  
s 1UIET SWITCHING  
s !VALANCHE ENERGY RATED  
s ,OW GATE CHARGE  
s ,OWER COST  
Applications  
s 0OWER FACTOR CORRECTION  
s 3ERVER AND TELECOM POWER SYSTEMS  
s 3OLAR INVERTERS  
s 3EMICONDUCTOR CAPITAL EQUIPMENT  
s )NDUCTION HEATING  
s !RC WELDING  
s 0LASMA CUTTING  
s "ATTERY CHARGERS  
s -EDICAL  
Quiet Switching  
The new Power MOS 8™ series is a result of extensive research into quiet switching. Input and reverse transfer capaci-  
tance values as well as their ratio were set at specific values to achieve quiet switching with minimal switching loss. The  
Power MOS 8™ series of devices are inherently quiet switching, stable when connected in parallel, very efficient, and  
lower cost than previous generations.  
Body Diode Options  
As with previous generation products, Power MOS 8™ MOSFETs and FREDFETs are available in all voltage ratings. A  
FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due  
to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not  
needed, MOSFET versions are available.  
6

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