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APT2X150DL60J PDF预览

APT2X150DL60J

更新时间: 2024-11-25 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管测试局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 135K
描述
Ultrafast Soft Recovery Dual Rectifi er Diode

APT2X150DL60J 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:R-XUFM-X4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:6.97Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, LOW LEAKAGE CURRENT, SNUBBER DIODE, UL RECOGNIZED应用:ULTRA FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.6 VJESD-30 代码:R-XUFM-X4
最大非重复峰值正向电流:1000 A元件数量:2
相数:1端子数量:4
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:600 V
最大反向电流:25 µA最大反向恢复时间:0.408 µs
反向测试电压:600 V子类别:Other Diodes
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPERBase Number Matches:1

APT2X150DL60J 数据手册

 浏览型号APT2X150DL60J的Datasheet PDF文件第2页浏览型号APT2X150DL60J的Datasheet PDF文件第3页浏览型号APT2X150DL60J的Datasheet PDF文件第4页 
2
3
2
3
APT2X151DL60J  
APT2X150DL60J  
1
4
1
4
600V 150A  
Anti-Parallel  
APT2X150DL60J  
Parallel  
APT2X151DL60J  
Ultrafast Soft Recovery Dual Rectier Diode  
3
2
PRODUCT FEATURES  
PRODUCT BENEFITS  
PRODUCT APPLICATIONS  
• Ultrafast Recovery Times (t  
)
• Low Losses  
• Anti-Parallel Diode  
-Switchmode Power Supply  
-Inverters  
rr  
4
1
• Soft Recoverery Characteristics  
• Low Forward Voltage  
• Low Noise Switching  
• Cooler Operation  
SOT-227  
• Free Wheeling Diode  
- Motor Controllers  
- Converters  
"UL Recongnized"  
file # 145592  
ISOTOPfi  
• Higher Reliability Systems  
• Low Forward Voltage  
• High Blocking Voltage  
• Low Leakage Current  
• Increased System Power  
Density  
• Snubber Diode  
• Uninterruptible Power Supply  
• Induction Heating  
• High Speed Rectiers  
MAXIMUM RATINGS  
All Ratings per Diode: T = 25°C unless otherwise specied.  
C
Symbol Characteristic / Test Conditions  
Ratings  
Unit  
Maximum D.C. Reverse Voltage  
VR  
VRRM  
VRWM  
IF(AV)  
Maximum Peak Repetitive Reverse Voltage  
600  
Volts  
Maximum Working Peak Reverse Voltage  
Maximum Average Forward current (TC = 40°C, Duty Cycle = 0.5)  
RMS Forward Currrent (Square wave, 50% duty)  
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)  
Operating and Storage Junction Temperature Range  
150  
165  
IF(RMS)  
IFSM  
Amps  
°C  
1000  
TJ, TSTG  
-55 to 175  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
Min  
Typ  
Max  
Unit  
IF = 150A  
1.25  
2.0  
1.6  
VF  
Forward Voltage  
IF = 300A  
Volts  
IF = 150A, TJ = 125°C  
VR = 600V  
1.25  
25  
IRM  
CT  
Maximum Reverse Leakage Current  
Junction Capacitance, VR = 200V  
μA  
VR = 600V, TJ = 125°C  
250  
139  
pF  
1 Continuous current limited by package lead temperature.  
Microsemi Website - http://www.microsemi.com  

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