APT15S20KCT

更新时间： 2024-11-16 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		肖特基二极管高压
页数	文件大小	规格书
4页	218K
描述
HIGH VOLTAGE SCHOTTKY DIODE

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中文翻译

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数据手册

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APT15S20KCT 数据手册

TO-220

1- Anode 1

2- Common Cathode

Back of Case -Cathode

3- Anode 2

APT15S20KCT(G) 200V 2X25A

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

HIGH VOLTAGE SCHOTTKY DIODE

PRODUCT APPLICATIONS

PRODUCT FEATURES

PRODUCT BENEFITS

• Parallel Diode

• Ultrafast Recovery Times

• Low Losses

-Switchmode Power Supply

-Inverters

• Free Wheeling Diode

-Motor Controllers

-Converters

• Snubber Diode

• Soft Recovery Characteristics

• Popular TO-220 Package

• Low Forward Voltage

• Low Noise Switching

• Cooler Operation

• Higher Reliability Systems

• Uninterruptible Power Supply (UPS)

• 48 Volt Output Rectiﬁers

• High Speed Rectiﬁers

• High Blocking Voltage

• Low Leakage Current

• Increased System Power

Density

MAXIMUM RATINGS

All Ratings Are Per Leg: T = 25°C unless otherwise speciﬁed.

Characteristic / Test Conditions

APT15S20KCT(G)

UNIT

Symbol

V_R

Maximum D.C. Reverse Voltage

V_RRM

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

Volts

200

V_RWM

I_F(AV)

I_F(RMS)

I_FSM

Maximum Average Forward Current (T_C= 122°C, Duty Cycle = 0.5)

RMS Forward Current (Square wave, 50% duty)

Amps

110

Non-Repetitive Forward Surge Current (T_J= 45°C, 8.3ms)

Operating and StorageTemperature Range

T_J,T_STG

-55 to 150

300

°C

T_L

Lead Temperature for 10 Sec.

Avalanche Energy (2A, 8mH)

E_VAL

STATIC ELECTRICAL CHARACTERISTICS

Symbol

UNIT

MIN

TYP

.80

.91

.67

MAX

I_F= 15A

.83

I_F= 30A

Forward Voltage

V_F

Volts

I_F= 15A, T_J= 125°C

V_R= V_RRated

.250

5.0

I_RM

C_T

Maximum Reverse Leakage Current

Junction Capacitance, V_R= 200V

V_R= V_RRated, T_J= 125°C

Microsemi Website - http://www.microsemi.com

12 3 4

中文翻译

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