是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.29 | 其他特性: | AVALANCHE ENERGY RATED |
雪崩能效等级(Eas): | 2500 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 1200 V |
最大漏极电流 (ID): | 16 A | 最大漏源导通电阻: | 0.8 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 64 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN SILVER COPPER |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT12080JVFR | ADPOW |
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POWER MOS V |
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APT12080JVR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
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APT12080LVFR | ADPOW |
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POWER MOS V |
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APT12080LVFRG | MICROSEMI |
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Power Field-Effect Transistor, 16A I(D), 1200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
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APT12080LVR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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APT-120T | ABRACON |
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Datacom Transformer, LAN; 10 BASE-T; ETHERNET Application(s), 1:1 |
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APT1211 | PANASONIC |
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Phototriac Coupler for the Industrial Machinery, Consumer Electronics, and SSR Markets |
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APT1211A | PANASONIC |
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Phototriac coupler ideal for triac driver with wide variation Triac driver for SSRs |
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APT1211AX | PANASONIC |
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暂无描述 |
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APT1211S | PANASONIC |
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Phototriac coupler ideal for triac driver with wide variation Triac driver for SSRs |
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