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AP99T06GP-HF PDF预览

AP99T06GP-HF

更新时间: 2024-01-21 09:36:30
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关驱动
页数 文件大小 规格书
4页 100K
描述
Simple Drive Requirement, Lower On-resistance, Fast Switching Characteristic

AP99T06GP-HF 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.59
Base Number Matches:1

AP99T06GP-HF 数据手册

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AP99T06GP-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
60V  
4.2mΩ  
120A  
Lower On-resistance  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for commercial-industrial  
through-hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TC=25  
ID@TC=25℃  
ID@TC=100℃  
IDM  
Continuous Drain Current (Chip)  
Continuous Drain Current, VGS @ 10V3  
Continuous Drain Current, VGS @ 10V3  
190  
A
120  
A
120  
A
Pulsed Drain Current1  
480  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
300  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 175  
-55 to 175  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
0.5  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
201108152  

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