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AP70T03GJ PDF预览

AP70T03GJ

更新时间: 2024-09-15 03:19:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 75K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP70T03GJ 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-251
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.62配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):60 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):195 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP70T03GJ 数据手册

 浏览型号AP70T03GJ的Datasheet PDF文件第2页浏览型号AP70T03GJ的Datasheet PDF文件第3页浏览型号AP70T03GJ的Datasheet PDF文件第4页 
AP70T03GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
9mΩ  
60A  
Low Gate Charge  
Fast Switching  
G
RoHS Compliant  
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-252(H)  
TO-251(J)  
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP70T03GJ) are available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current, VGS @ 10V  
ID@TA=25  
ID@TA=100℃  
IDM  
60  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
43  
A
195  
A
PD@TA=25℃  
Total Power Dissipation  
53  
W
Linear Derating Factor  
0.36  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 175  
-55 to 175  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
2.8  
Rthj-a  
110  
Data and specifications subject to change without notice  
200823053-1/4  

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