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AP4KE11A-G PDF预览

AP4KE11A-G

更新时间: 2024-11-18 20:55:39
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
4页 99K
描述
Trans Voltage Suppressor Diode,

AP4KE11A-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.78
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

AP4KE11A-G 数据手册

 浏览型号AP4KE11A-G的Datasheet PDF文件第2页浏览型号AP4KE11A-G的Datasheet PDF文件第3页浏览型号AP4KE11A-G的Datasheet PDF文件第4页 
400W Transient Voltage Suppressor  
AP4KE-G Series  
Breakdown Voltage: 6.8 to 600 Volts  
Peak Pulse Power: 400 Watts  
RoHS Device  
Features  
- Glass passivated chip.  
DO-41  
- 400W peak pulse power capability with a 10/1000µs  
waveform, repetitive rate (duty cycle):0.01%  
- Low leakage.  
0.033(0.84)  
0.027(0.71)  
DIA.  
1.000(25.40)  
MIN.  
- Uni and Bidirectional unit.  
- Excellent clamping capability.  
- Very fast response time.  
R
- UL recognized file # E349157  
- Range: AP4KE6.8(C)A thru. AP4KE33(C)A  
- Comply with AEC-Q101.  
0.205(5.21)  
0.165(4.19)  
0.117(2.97)  
0.090(2.29)  
DIA.  
Mechanical Data  
-Case: Molded plastic DO-41.  
-Epoxy: UL 94V-0 rate flame retardant.  
1.000(25.40)  
MIN.  
-Lead: Solderable per MIL-STD-202,  
method 208 guranteed.  
-Polarity: Color band denotes cathode end  
Dimensions in inches and (millimeter)  
except Bipolar.  
-Monuting position: Any.  
-Weight: 0.321 gram (approx.)  
Maximum Ratings (TA=25°C unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
Peak power dissipation with a 10/1000μs  
waveform (Note 1)  
PPP  
W
400  
Peak pulse current with a 10/1000μs waveform  
(Note 1)  
IPP  
PD  
See Next Table  
A
Power dissipation on infinite heatsink at TL=75°C  
1.0  
40  
W
Peak forward surge current, 8.3ms single  
half sine-wave unidirectional only  
(Note 2)  
IFSM  
A
Maximum instantaneous forward voltage at  
25 A for unidirectional only (Note 3)  
VF  
3.5/5.0  
V
Operating junction and storage  
temperature range  
TJ, TSTG  
-55 to +150  
°C  
NTOES:  
(1) Non-repetitive current pulse per fig.5 and derated above TA=25°C per fig.1  
(2) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum  
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:A  
Page 1  
AQW-BTV08  
Comchip Technology CO., LTD.  

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