AP40P03GJ

更新时间： 2024-02-08 16:19:21

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	63K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP40P03GJ 数据手册

AP40P03GH/J

Pb Free Plating Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower On-resistance

BV_DSS

R_DS(ON)

I_D

-30V

28mΩ

-30A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant

Description

The TO-252 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP40P03GJ) is available for low-profile applications.

TO-252(H)

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

-30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-30

-18

-120

31.3

0.25

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

Data and specifications subject to change without notice

201109063-1/4

12 3 4

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