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AP22T03GH-HF PDF预览

AP22T03GH-HF

更新时间: 2024-01-23 06:17:19
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体栅极晶体管功率场效应晶体管开关脉冲驱动
页数 文件大小 规格书
4页 99K
描述
Lower Gate Charge Simple Drive Requirement

AP22T03GH-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.75
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):15.6 A最大漏源导通电阻:0.033 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):50 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP22T03GH-HF 数据手册

 浏览型号AP22T03GH-HF的Datasheet PDF文件第1页浏览型号AP22T03GH-HF的Datasheet PDF文件第3页浏览型号AP22T03GH-HF的Datasheet PDF文件第4页 
AP22T03GH-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=12A  
VGS=0V, ID=250uA  
30  
-
-
-
-
-
V
33  
60  
mΩ  
mΩ  
V
GS=4.5V, ID=8A  
-
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge2  
VDS=VGS, ID=250uA  
VDS=10V, ID=12A  
VDS=24V, VGS=0V  
VGS=+20V, VDS=0V  
ID=8A  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.5  
-
3
V
gfs  
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
25  
-
+100  
Qg  
4
6.4  
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=24V  
1.3  
2.3  
6
-
-
-
-
-
-
VGS=4.5V  
VDS=15V  
ID=8A  
23  
13  
3
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3,VGS=10V  
RD=1.88Ω  
Ciss  
Coss  
Crss  
Input Capacitance  
VGS=0V  
280 448  
Output Capacitance  
Reverse Transfer Capacitance  
VDS=25V  
75  
50  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=12A, VGS=0V  
IS=8A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
16  
8
1.2  
V
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2

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