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AP2030M PDF预览

AP2030M

更新时间: 2024-11-26 21:55:31
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
11页 115K
描述
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2030M 数据手册

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AP2030M  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Simple Drive Requirement  
N-CH BVDSS  
20V  
30mΩ  
6A  
D2  
D2  
Low On-resistance  
Fast Switching  
RDS(ON)  
D1  
D1  
ID  
P-CH BVDSS  
RDS(ON)  
G2  
S2  
-20V  
50mΩ  
-5A  
G1  
SO-8  
S1  
Description  
ID  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
D2  
D1  
G2  
The SO-8 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters.  
G1  
S1  
S2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
20  
P-channel  
-20  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
V
V
±8  
6
±8  
-5  
ID@TA=25  
ID@TA=70℃  
IDM  
A
A
4.8  
20  
-4  
-20  
A
PD@TA=25℃  
Total Power Dissipation  
2.0  
W
Linear Derating Factor  
0.016  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-amb  
Thermal Resistance Junction-ambient3  
Max.  
/W  
Data and specifications subject to change without notice  
20093002  

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