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AP1332GEU-HF PDF预览

AP1332GEU-HF

更新时间: 2024-11-20 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体栅极小信号场效应晶体管开关光电二极管栅极驱动
页数 文件大小 规格书
4页 61K
描述
Lower Gate Charge, Simple Gate Drive

AP1332GEU-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.67Is Samacsys:N
其他特性:ULTRA LOW RESISTANCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏源导通电阻:0.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP1332GEU-HF 数据手册

 浏览型号AP1332GEU-HF的Datasheet PDF文件第2页浏览型号AP1332GEU-HF的Datasheet PDF文件第3页浏览型号AP1332GEU-HF的Datasheet PDF文件第4页 
AP1332GEU-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
20V  
D
Simple Gate Drive  
600mΩ  
600mA  
Small Package Outline  
S
RoHS Compliant & Halogen-Free  
SOT-323  
G
Description  
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, low on-resistance and cost-  
effectiveness.  
D
G
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
20  
Unit  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+8  
V
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
600  
mA  
mA  
A
470  
2.5  
PD@TA=25℃  
Total Power Dissipation  
0.35  
W
Linear Derating Factor  
0.003  
-55 to 150  
-55 to 150  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
360  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201204255  

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