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AOW25S65 PDF预览

AOW25S65

更新时间: 2024-09-26 12:51:39
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
6页 271K
描述
650V 25A a MOS TM Power Transistor

AOW25S65 数据手册

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AOW25S65/AOWF25S65  
650V 25A  
α
MOS TM Power Transistor  
General Description  
Product Summary  
VDS @ Tj,max  
IDM  
750V  
The AOW25S65 & AOWF25S65 have been fabricated  
using the advanced αMOSTM high voltage process that is  
designed to deliver high levels of performance and  
robustness in switching applications.  
104A  
RDS(ON),max  
Qg,typ  
0.19Ω  
26.4nC  
5.8µC  
By providing low RDS(on), Qg and EOSS along with  
guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power supply  
designs.  
Eoss @ 400V  
100% UIS Tested  
100% Rg Tested  
TO-262  
TO-262F  
D
Top View  
Bottom View  
Top View  
Bottom View  
G
G
S
G
S
S
D
D
D
S
G
D
S
G
AOW25S65  
AOWF25S65  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
AOW25S65  
AOWF25S65  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
650  
V
V
VGS  
±30  
TC=25°C  
25  
16  
25*  
16*  
Continuous Drain  
Current  
ID  
TC=100°C  
A
Pulsed Drain Current C  
Avalanche Current C  
IDM  
IAR  
104  
7
A
mJ  
Repetitive avalanche energy C  
Single pulsed avalanche energy G  
TC=25°C  
EAR  
EAS  
96  
750  
mJ  
W
W/ oC  
357  
2.9  
28  
PD  
Power Dissipation B  
Derate above 25oC  
0.22  
100  
20  
MOSFET dv/dt ruggedness  
dv/dt  
V/ns  
°C  
Peak diode recovery dv/dt H  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds J  
Thermal Characteristics  
TL  
300  
°C  
Parameter  
Symbol  
AOW25S65  
AOWF25S65  
Units  
Maximum Junction-to-Ambient A,D  
RθJA  
65  
65  
°C/W  
Maximum Case-to-sink A  
RθCS  
RθJC  
0.5  
--  
°C/W  
°C/W  
Maximum Junction-to-Case  
0.35  
4.5  
* Drain current limited by maximum junction temperature.  
Rev0: Dec 2011  
www.aosmd.com  
Page 1 of 6  

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