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AOT414 PDF预览

AOT414

更新时间: 2024-09-30 12:24:23
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
7页 504K
描述
100V N-Channel MOSFET

AOT414 数据手册

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AOT414  
100V N-Channel MOSFET  
General Description  
The AOT414 is fabricated with SDMOSTM trench  
technology that combines excellent RDS(ON) with low gate  
charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well  
suited for PWM, load switching and general purpose  
identical.  
applications.AOT414 and AOT414L are electrically  
Features  
VDS  
100V  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 7V)  
43A  
< 25m  
< 31mΩ  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
100  
±25  
43  
V
V
VGS  
TC=25°C  
Continuous Drain  
Current G  
Pulsed Drain Current C  
ID  
TC=100°C  
31  
A
A
IDM  
100  
5.6  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
IDSM  
4.5  
IAR  
28  
A
EAR  
39  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
115  
PD  
W
58  
TA=25°C  
1.9  
PDSM  
W
Power Dissipation A  
1.23  
-55 to 175  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
11.6  
54  
Max  
13.9  
65  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
RθJC  
0.7  
1.3  
1/7  
www.freescale.net.cn  

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