Datasheet > AOT416

AOT416

更新时间： 2024-09-30 12:24:59

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	280K
描述
100V N-Channel MOSFET

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AOT416 数据手册

AOT416

100V N-Channel MOSFET

SDMOS^TM

General Description

Product Summary

The AOT416 is fabricated with SDMOS^TMtrench

V_DS

100V

42A

I_D(at V_GS=10V)

technology that combines excellent R_DS(ON)with low gate

charge.The result is outstanding efficiency with controlled

switching behavior. This universal technology is well suited

for PWM, load switching and general purpose applications.

< 37mΩ

R_DS(ON)(at V_GS=10V)

< 43mΩ

R_DS(ON)(at V_GS= 7V)

100% UIS Tested

100% R_gTested

TO220

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

100

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

±25

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

T_C=100°C

110

4.7

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

3.8

I_AS, I_AR

E_AS, E_AR

T_C=25°C

150

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

1.92

1.23

-55 to 175

P_DSM

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

11.6

Max

13.9

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

0.7

Rev0: April 2009

www.aosmd.com

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