Datasheet > AMPLIFIER

AMPLIFIER

更新时间： 2024-11-17 23:30:27

品牌	Logo	应用领域
其他 - ETC		放大器功率放大器
页数	文件大小	规格书
3页	42K
描述
GaAs MMIC Power Amplifier，2 W 14.014.5 GHz

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AMPLIFIER 数据手册

AM42-0007

GaAs MMIC VSAT Power Amplifier 2.0W

14.0 - 14.5 GHz

Features

CR-15

•

High Linear Gain: 22 dB Typ.

High Saturated Output Power: +33 dBm Typ.

High Power Added Efficiency: 22% Typ.

High P_1dB: 32 dBm Typ.

50Ω=Input/Output Broadband Matched

Integrated Output Power Detector

High Performance Ceramic Bolt Down Package

- C -

.70

.530

.085

10 .050 MIN.

- B -

.159

.328 ± .010

.318 ± .010

2X o .096 THRU

o.004 M A B

Description

4X .06 X 45°

M/A-COM’s AM42-0007 is a three-stage MMIC linear power

amplifier in a ceramic bolt down style hermetic package. The

AM42-0007 employs a fully matched chip with internally

decoupled Gate and Drain bias networks and an ouput power

detector. The AM42-0007 is designed to be operated from a

constant voltage Drain supply.

.010 SQ.

ORIENTATION TAB

.115 ± .010

CHAMFER

10 .010 ± .003

4X .050

4X .100

.33

CERAMIC

.005± .002

.090 MAX

.040

BASE PLATE

- A -

.030

The AM42-0007 is designed for use as an output stage or a

driver, in applications for VSAT systems. This design is fully

monolithic and requires a minimum of external components.

Notes: (unless otherwise specified)

1. Dimensions are in inches.

2. Tolerance: .XXX = ± 0.005

.XX = ± 0.010

M/A-COM’s AM42-0007 is fabricated using a mature 0.5

micron GaAs MESFET process. The process features full

passivation for increased performance and reliability. This

product is 100% RF tested to ensure compliance to performance

specifications.

Ordering Information

Part Number

Package

AM42-0007

Ceramic Bolt Down Package

Electrical Specifications: T_C= +25°C, VDD = +9V, VGG = -5.0V, Z₀= 50Ω,=Frequency = 14.0-14.5 GHz

Parameter

Abbv.

Test Conditions

Units

Min.

Typ.

Max.

—

Linear Gain

G_L

P_IN≤ 0 dBm

Input VSWR

Output VSWR

VSWR_IN

VSWR_OU

P_IN≤ 0 dBm

—

2.5:1

2.7:1

—

Saturated Output Power

Output Power @

P_SAT

P_1dB

_IN= +14 dBm

dBm

—

Output IP₃

Power Added Efficiency

Bias Currents

IP₃

PAE

I_GG

(Refer to Note 1)

dBm

—

P_IN= +14 dBm

_IN= +14 dBm

Thermal Resistance

Detector Output Voltage

θ_JC

V_det

25°C Heat Sink

R_L=10KΩ, P_OUT=+31dBm

°C/W

—

9.5

+3.5

—

IP₃is measured with two +24 dBm output tones @ 1 MHz spacing.

Specifications subject to change without notice.

V 4.0

ꢀ North America: Tel. (800) 366-2266, Fax (800) 618-8883

ꢀ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298

ꢀ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

Visit www.macom.com for additional data sheets and product information.

12 3

中文翻译

下载PDF

与AMPLIFIER相关器件

型号	品牌	获取价格	描述	数据表
AMPL-UZ10A	AIMTEC	获取价格	Up to 50 Watt \| DC-DC Converter
AMPL-UZ16A	AIMTEC	获取价格	Up to 80 Watt \| DC-DC Converter
AMPMADA-1.0000	ABRACON	获取价格	AMPM MEMS OSC XO 1.0000MHZ CMOS SMD
AMPMADA-1.0000T	ABRACON	获取价格	AMPM MEMS OSC XO 1.0000MHZ CMOS SMD
AMPMADA-1.0000T3	ABRACON	获取价格	AMPM MEMS OSC XO 1.0000MHZ CMOS SMD
AMPMADA-1.8432	ABRACON	获取价格	AMPM MEMS OSC XO 1.8432MHZ CMOS SMD
AMPMADA-1.8432T	ABRACON	获取价格	AMPM MEMS OSC XO 1.8432MHZ CMOS SMD
AMPMADA-1.8432T3	ABRACON	获取价格	AMPM MEMS OSC XO 1.8432MHZ CMOS SMD
AMPMADA-10.0000	ABRACON	获取价格	AMPM MEMS OSC XO 10.0000MHZ CMOS SMD
AMPMADA-10.0000T	ABRACON	获取价格	AMPM MEMS OSC XO 10.0000MHZ CMOS SMD

与AMPLIFIER相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

AMPLIFIER

AMPLIFIER 数据手册

与AMPLIFIER相关器件

与AMPLIFIER相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AMPLIFIER

AMPLIFIER 数据手册

与AMPLIFIER相关器件

与AMPLIFIER相关文章

您还可以找

您在本页遇到什么问题？