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AMMC-5026 PDF预览

AMMC-5026

更新时间: 2024-02-15 02:07:25
品牌 Logo 应用领域
安捷伦 - AGILENT 射频和微波射频放大器微波放大器
页数 文件大小 规格书
8页 169K
描述
2-35 GHz GaAs MMIC Traveling Wave Amplifier

AMMC-5026 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:3A001.B.2.DHTS代码:8542.33.00.01
风险等级:5.1特性阻抗:50 Ω
构造:COMPONENT增益:8.5 dB
最大输入功率 (CW):23 dBmJESD-609代码:e4
最大工作频率:35000 MHz最小工作频率:2000 MHz
射频/微波设备类型:WIDE BAND MEDIUM POWER端子面层:Gold (Au)
Base Number Matches:1

AMMC-5026 数据手册

 浏览型号AMMC-5026的Datasheet PDF文件第1页浏览型号AMMC-5026的Datasheet PDF文件第3页浏览型号AMMC-5026的Datasheet PDF文件第4页浏览型号AMMC-5026的Datasheet PDF文件第5页浏览型号AMMC-5026的Datasheet PDF文件第6页浏览型号AMMC-5026的Datasheet PDF文件第7页 
AMMC-5026 DC Specifications/Physical Properties[1]  
Symbol  
Parameters and Test Conditions  
Units  
Min.  
Typ.  
Max.  
Idss  
Vp1  
Saturated Drain Current (Vdd=7 V, Vg1=0 V, Vg2=open circuit)  
First Gate Pinch-off Voltage (Vdd=7 V, Idd=0.1 Idss, Vg2=open circuit)  
Second Gate Self-bias Voltage (Vdd=7 V, Idd=150 mA, Vg2=open circuit)  
mA  
V
250  
350  
-1.2  
3.5  
75  
450  
Vg2  
V
Idsoff  
First Gate Pinch-off Current  
mA  
(Vg1  
)
(Vdd=7 V, Vg1=3.5 V, Vg2=open circuit)  
θch-b  
Thermal Resistance[2] (Backside temperature, Tb = 25°C)  
°C/W  
28  
Notes:  
1. Backside temperature Tb = 25°C unless otherwise noted.  
2. Channel-to-backside Thermal Resistance (θch-b) = 38°C/W at Tchannel (Tc) = 150°C as measured using the liquid crystal method. Thermal Resistance at  
backside temperature (Tb) = 25°C calculated from measured data.  
RF Specifications[3,4] (Vdd = 7V, Idd (Q) = 150 mA, Zin = Z0 = 50)  
Symbol  
Parameters and Test Conditions  
Units  
Min.  
Typ.  
Max.  
2
|S21  
|
Small-signal Gain  
dB  
8.5  
10.5  
±0.75  
17  
12.5  
2
|S21  
|
Small-signal Gain Flatness  
Input Return Loss  
dB  
±1.5  
RLin  
dB  
13  
12  
23  
22  
RLout  
Output Return Loss  
dB  
15  
2
|S12|  
Isolation  
dB  
26  
P-1dB  
Psat  
Output Power @ 1 dB Gain Compression  
Saturated Output Power  
f = 10 GHz  
f = 10 GHz  
dBm  
dBm  
dBm  
24  
26  
OIP3  
Output 3rd Order Intercept Point,  
31  
RFin1 = RFin2 = - 20 dBm, f = 10 GHz, f = 2 MHz  
NF  
Noise Figure  
f = 10 GHz  
f = 20 GHz  
dB  
dB  
3.6  
4.3  
H2  
H3  
Second Harmonic (Pin = 12 dBm at 10 GHz)  
Third Harmonic (Pin = 12 dBm at 10 GHz)  
dBc  
dBc  
-20  
-30  
-17.5  
-28  
Notes:  
3. Data measured in wafer form, Tchuck = 25°C.  
4. 100% on wafer RF test is done at frequency = 2, 10, 22, 26.5, and 35 GHz, except as noted.  
2

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