Datasheet > 射频和微波 > 射频/微波放大器> AMMC-5618-W50

AMMC-5618-W50

更新时间： 2024-01-25 07:05:50

品牌	Logo	应用领域
安捷伦 - AGILENT		射频和微波射频放大器微波放大器
页数	文件大小	规格书
8页	140K
描述
6 - 20 GHz Amplifier

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AMMC-5618-W50 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	DIE OR CHIP	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.33.00.01
风险等级：	5.23	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	12.5 dB	最大输入功率 (CW)：	20 dBm
功能数量：	1	最大工作频率：	20000 MHz
最小工作频率：	6000 MHz	封装等效代码：	DIE OR CHIP
电源：	5 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	140 mA

AMMC-5618-W50 数据手册

Agilent AMMC-5618

6 - 20 GHz Amplifier

Data Sheet

Chip Size:

920 x 920 µm (36.2 x 36.2 mils)

100 ± 10µm (4 ± 0.4 mils)

Chip Size Tolerance:± 10µm (± 0.4 mils)

Chip Thickness:

Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)

Description

Agilent’s AMMC-5618 6−20 GHz

MMIC is an efficient two-stage

amplifier designed to be used as

a cascadable intermediate gain

block for EW applications. In

communication systems, it can

be used as a LO buffer, or as a

transmit driver amplifier. It is

fabricated using a PHEMT

Features

Applications

• Frequency Range: 6 − 20 GHz

• High Gain: 14.5 dB Typical

• Output Power: 19.5 dBm Typical

• Driver/Buffer in microwave

communication systems

• Cascadable gain stage for EW

systems

• Input and Output Return Loss: < -12

• Phased array radar and transmit

amplifiers

• Flat Gain Response: ± 0.3 dB Typical

integrated circuit structure that

provides exceptional efficiency

and flat gain performance.

During typical operation with a

single 5-V supply, each gain

stage is biased for Class-A

operation for optimal power

output with minimal distortion.

The RF input and output have

matching circuitry for use in

50-Ω environments. The

backside of the chip is both RF

and DC ground. This helps

simplify the assembly process

and reduces assembly related

performance variations and

costs. The MMIC is a cost

• Single Supply Bias: 5 V @ 107 mA

[1]

AMMC-5618 Absolute Maximum Ratings

Symbol

Parameters/Conditions

Drain Supply Voltage

Optional Gate Voltage

Drain Supply Current

RF Input Power

Units

Min.

Max.

D1 D2

-5

dBm

°C

Channel Temp.

+150

Operating Backside Temp.

Storage Temp.

°C

-55

-65

°C

+165

+300

stg

effective alternative to hybrid

(discrete FET) amplifiers that

require complex tuning and

assembly processes.

Maximum Assembly Temp. (60 sec max) °C

max

Note:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

Note: These devices are ESD sensitive. The following precautions are strongly recommended:

Ensure that an ESD approved carrier is used when dice are transported from one destination to another.

Personal grounding is to be worn at all times when handling these devices.

12 3 4 5 6 7 8

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