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AM50DL128BH70IT PDF预览

AM50DL128BH70IT

更新时间: 2024-01-27 22:27:36
品牌 Logo 应用领域
超微 - AMD 闪存静态存储器
页数 文件大小 规格书
68页 966K
描述
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

AM50DL128BH70IT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:LFBGA,
针数:73Reach Compliance Code:compliant
HTS代码:8542.32.00.71风险等级:5.71
其他特性:PSEUDO STATIC RAM IS ORGANIZED AS 2M X 16; FLASH CAN ALSO BE ORGANIZED AS 8M X 8JESD-30 代码:R-PBGA-B73
JESD-609代码:e0长度:11.6 mm
内存密度:67108864 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:73
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.4 mm最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
宽度:8 mmBase Number Matches:1

AM50DL128BH70IT 数据手册

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For More Information  
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Publication Number 30773 Revision A Amendment +1 Issue Date October 7, 2003  

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