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AM49DL640AH85IS PDF预览

AM49DL640AH85IS

更新时间: 2024-02-06 09:59:06
品牌 Logo 应用领域
飞索 - SPANSION 闪存存储内存集成电路静态存储器
页数 文件大小 规格书
63页 944K
描述
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM

AM49DL640AH85IS 技术参数

生命周期:Active包装说明:FBGA, BGA73,10X12,32
Reach Compliance Code:compliant风险等级:5.69
最长访问时间:85 nsJESD-30 代码:R-PBGA-B73
内存集成电路类型:MEMORY CIRCUIT混合内存类型:FLASH+PSRAM
端子数量:73最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA73,10X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
电源:3 V认证状态:Not Qualified
最大待机电流:0.000005 A子类别:Other Memory ICs
最大压摆率:0.045 mA标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
Base Number Matches:1

AM49DL640AH85IS 数据手册

 浏览型号AM49DL640AH85IS的Datasheet PDF文件第2页浏览型号AM49DL640AH85IS的Datasheet PDF文件第3页浏览型号AM49DL640AH85IS的Datasheet PDF文件第4页浏览型号AM49DL640AH85IS的Datasheet PDF文件第5页浏览型号AM49DL640AH85IS的Datasheet PDF文件第6页浏览型号AM49DL640AH85IS的Datasheet PDF文件第7页 
Am49DL640AH  
Data Sheet  
July 2003  
The following document specifies Spansion memory products that are now offered by both Advanced  
Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-  
inally developed the specification, these products will be offered to customers of both AMD and  
Fujitsu.  
Continuity of Specifications  
There is no change to this datasheet as a result of offering the device as a Spansion product. Any  
changes that have been made are the result of normal datasheet improvement and are noted in the  
document revision summary, where supported. Future routine revisions will occur when appropriate,  
and changes will be noted in a revision summary.  
Continuity of Ordering Part Numbers  
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM. To order  
these products, please use only the Ordering Part Numbers listed in this document.  
For More Information  
Please contact your local AMD or Fujitsu sales office for additional information about Spansion  
memory solutions.  
Publication Number 26549 Revision B Amendment +1 Issue Date December 12, 2003  

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