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AM49DL640AG70IT PDF预览

AM49DL640AG70IT

更新时间: 2024-02-29 23:06:11
品牌 Logo 应用领域
超微 - AMD 闪存静态存储器
页数 文件大小 规格书
65页 944K
描述
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

AM49DL640AG70IT 技术参数

生命周期:Transferred零件包装代码:BGA
包装说明:LFBGA, BGA73,10X12,32针数:73
Reach Compliance Code:compliantHTS代码:8542.32.00.71
风险等级:5.33最长访问时间:70 ns
其他特性:PSEUDO SRAM IS ORGANISED AS 1M X 16; FLASH CAN ALSO BE ORGANISED AS 8M X 8JESD-30 代码:R-PBGA-B73
长度:11.6 mm内存密度:67108864 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
混合内存类型:FLASH+PSRAM功能数量:1
端子数量:73字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装等效代码:BGA73,10X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
电源:3 V认证状态:Not Qualified
座面最大高度:1.4 mm最大待机电流:0.00007 A
子类别:Other Memory ICs最大压摆率:0.045 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:8 mm

AM49DL640AG70IT 数据手册

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P R E L I M I N A R Y  
64  
Am49DL640AG  
April 1, 2003  

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