Datasheet > AM4102DVR

AM4102DVR

更新时间： 2024-12-02 01:15:31

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
9页	752K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AM4102DVR 数据手册

AM4102

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

FEATURES

The AM4102 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. It can be used in a wide variety of

applications.



V_DS=30V, I_D=50A

_DS(ON)<11mΩ@ V_GS=10V

_DS(ON)<16mΩ@ V_GS=5V



High density cell design for ultra low R_DSON

Fully characterized Avalanche voltage and

current

AM4102 is available in a TO252-2 package.



Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Special process technology for high ESD

capability



Available in a TO252-2 package.

ORDERING INFORMATION

APPLICATION



Power switching application

Hard switched and high frequency circuits

Uninterruptible Power Supply

Package Type

Part Number

AM4102DR

AM4102DVR

TO252-2

SPQ: 2,500pcs/Reel

PIN DESCRIPTION

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

Schematic diagram

REV1.0

- JUN 2017 RELEASED -

- 1 -

12 3 4 5 6 7...9

中文翻译

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