Datasheet > AM29SL160CB100EC

AM29SL160CB100EC

更新时间： 2024-12-02 03:02:11

品牌	Logo	应用领域
飞索 - SPANSION		可编程只读存储器光电二极管内存集成电路
页数	文件大小	规格书
49页	937K
描述
2MX8 FLASH 1.8V PROM, 100ns, PDSO48, MO-142DD, TSOP-48

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AM29SL160CB100EC 数据手册

Am29SL160C

16 Megabit (2 M x 8-Bit/1 M x 16-Bit)

CMOS 1.8 Volt-only Super Low Voltage Flash Memory

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

SOFTWARE FEATURES

■ Secured Silicon (SecSi) Sector: 256-byte sector

■ Supports Common Flash Memory Interface (CFI)

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

■ Erase Suspend/Erase Resume

— Suspends erase operations to allow programming in

same bank

■ Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

— Customer lockable: Customer may program own

custom data. Once locked, data cannot be changed

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

■ Zero Power Operation

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero

HARDWARE FEATURES

■ Package options

— 48-ball FBGA

— 48-pin TSOP

■ Any combination of sectors can be erased

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

■ Top or bottom boot block

■ Manufactured on 0.32 µm process technology

■ Hardware reset pin (RESET#)

— Hardware method of resetting the internal state

machine to reading array data

■ Compatible with JEDEC standards

— Pinout and software compatible with single-power-

supply flash standard

■ WP#/ACC input pin

— Write protect (WP#) function allows protection of two

outermost boot sectors, regardless of sector protect status

PERFORMANCE CHARACTERISTICS

■ High performance

— Acceleration (ACC) function accelerates program

timing

— Access time as fast 90 ns

— Program time: 8 µs/word typical using Accelerate

■ Sector protection

— Hardware method of locking a sector, either in-

system or using programming equipment, to prevent

any program or erase operation within that sector

■ Ultra low power consumption (typical values)

— 1 mA active read current at 1 MHz

— 5 mA active read current at 5 MHz

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

— 1 µA in standby or automatic sleep mode

■ Minimum 1 million erase cycles guaranteed per

sector

■ 20 Year data retention at 125°C

— Reliable operation for the life of the system

Publication# 21635 Rev: C Amendment/0

Issue Date: February 21, 2000

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM29SL160CB100EC相关器件

型号	品牌	获取价格	描述	数据表
AM29SL160CB-100EC	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB-100ECN	AMD	获取价格	16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB100ED	SPANSION	获取价格	Flash, 1MX16, 100ns, PDSO48, LEAD FREE, MO-142DD, TSOP-48
AM29SL160CB-100ED	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB-100EDN	AMD	获取价格	16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB-100EEN	AMD	获取价格	16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB100EF	SPANSION	获取价格	Flash, 1MX16, 100ns, PDSO48, LEAD FREE, MO-142DD, TSOP-48
AM29SL160CB-100EF	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB-100EFN	AMD	获取价格	16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB100EI	SPANSION	获取价格	2MX8 FLASH 1.8V PROM, 100ns, PDSO48, MO-142DD, TSOP-48

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