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AM29LV008BB-120EI PDF预览

AM29LV008BB-120EI

更新时间: 2024-02-21 23:06:42
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
38页 462K
描述
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

AM29LV008BB-120EI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSSOP, TSSOP40,.8,20Reach Compliance Code:unknown
风险等级:5.92Is Samacsys:N
最长访问时间:120 ns启动块:BOTTOM
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G40
JESD-609代码:e0内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
部门数/规模:1,2,1,15端子数量:40
字数:1048576 words字数代码:1000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP40,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL电源:3/3.3 V
就绪/忙碌:YES反向引出线:YES
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.03 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPEBase Number Matches:1

AM29LV008BB-120EI 数据手册

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PRELIMINARY  
Am29LV008B  
8 Megabit (1 M x 8-Bit)  
CMOS 3.0 Volt-only Boot Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Unlock Bypass Program Command  
— Full voltage range: 2.7 to 3.6 volt read and write  
operations for battery-powered applications  
— Reduces overall programming time when  
issuing multiple program command sequences  
— Regulated voltage range: 3.0 to 3.6 volt read  
and write operations and for compatibility with  
high performance 3.3 volt microprocessors  
Top or bottom boot block configurations  
available  
Embedded Algorithms  
Manufactured on 0.35 µm process technology  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
— Compatible with 0.5 µm Am29LV008 device  
High performance  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
— Full voltage range: access times as fast as 80 ns  
— Regulated voltage range: access times as fast  
as 70 ns  
Minimum 1,000,000 write cycle guarantee per  
sector  
Ultra low power consumption (typical values at  
Package option  
5 MHz)  
— 40-pin TSOP  
— 200 nA Automatic Sleep mode current  
— 200 nA standby mode current  
— 7 mA read current  
Compatibility with JEDEC standards  
— Pinout and software compatible with single-  
power supply Flash  
— 15 mA program/erase current  
— Superior inadvertent write protection  
Flexible sector architecture  
Data# Polling and toggle bits  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
fifteen 64 Kbyte sectors  
— Provides a software method of detecting  
program or erase operation completion  
— Supports full chip erase  
— Sector Protection features:  
Ready/Busy# pin (RY/BY#)  
A hardware method of locking a sector to  
prevent any program or erase operations within  
that sector  
— Provides a hardware method of detecting  
program or erase cycle completion  
Erase Suspend/Erase Resume  
Sectors can be locked in-system or via  
programming equipment  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
Hardware reset pin (RESET#)  
— Hardware method to reset the device to reading  
array data  
This document contains information on a product under development at Advanced Micro Devices. The information  
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed  
product without notice.  
Publication# 21524 Rev: B Amendment/+1  
Issue Date: March 1998  
Refer to AMD’s Website (www.amd.com) for the latest information.  

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