Datasheet > AM29LV008B-90RECB

AM29LV008B-90RECB

更新时间： 2024-01-19 03:06:33

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
39页	143K
描述
8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory

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技术参数
数据手册

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AM29LV008B-90RECB 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.74
Is Samacsys：	N	Base Number Matches：	1

AM29LV008B-90RECB 数据手册

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P R E L I M I N A R Y

AC CHARACTERISTICS

Write (Erase/Program) Operations

Alternate CE Controlled Writes

Parameter Symbols

JEDEC

Standard Description

-90R

-100

100

-120

120

-150

150

Unit

Write Cycle Time (Note 1)

Min

AVAV

AVEL

ELAX

DVEH

EHDX

Address Setup Time

Address Hold Time

Data Setup Time

Data Hold Time

OES

Output Enable Setup Time

Read (Note 1)

Output Enable

Hold Time

OEH

Toggle and Data Polling

(Note 1)

Min

Read Recovery Time Before Write

(OE High to WE Low)

GHEL

WE Setup Time

Min

Typ

WLEL

WE Hold Time

EHWH

ELEH

CE Pulse Width

CE Pulse Width High

Programming Operation

Sector Erase Operation (Note 3)

EHEL

CPH

µs

sec

WHWH1

WHWH2

WHWH1

WHWH2

Notes:

1. Not 100% tested.

2. The duration of the program or erase operation is variable and is calculated in the internal algorithms.

3. Does not include the preprogramming time.

Am29LV008T/Am29LV008B

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