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AM29F800BT-70WBE PDF预览

AM29F800BT-70WBE

更新时间: 2024-11-04 05:29:19
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路
页数 文件大小 规格书
44页 1486K
描述
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

AM29F800BT-70WBE 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:BGA包装说明:TFBGA, BGA48,6X8,32
针数:48Reach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.4Is Samacsys:N
最长访问时间:70 ns其他特性:MINIMUM 1,000,000 PROGRAM/ERASE CYCLES PER SECTOR; 20-YEAR DATA RETENTION
备用内存宽度:8启动块:TOP
命令用户界面:YES数据轮询:YES
数据保留时间-最小值:20耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PBGA-B48JESD-609代码:e0
长度:9 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,15
端子数量:48字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512KX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.06 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
切换位:YES类型:NOR TYPE
宽度:6 mmBase Number Matches:1

AM29F800BT-70WBE 数据手册

 浏览型号AM29F800BT-70WBE的Datasheet PDF文件第2页浏览型号AM29F800BT-70WBE的Datasheet PDF文件第3页浏览型号AM29F800BT-70WBE的Datasheet PDF文件第4页浏览型号AM29F800BT-70WBE的Datasheet PDF文件第5页浏览型号AM29F800BT-70WBE的Datasheet PDF文件第6页浏览型号AM29F800BT-70WBE的Datasheet PDF文件第7页 
Am29F800B  
Data Sheet  
The following document contains information on Spansion memory products.  
Continuity of Specifications  
There is no change to this data sheet as a result of offering the device as a Spansion product. Any  
changes that have been made are the result of normal data sheet improvement and are noted in the  
document revision summary.  
For More Information  
Please contact your local sales office for additional information about Spansion memory solutions.  
Publication Number 21504 Revision E Amendment 5 Issue Date November 2, 2006  

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