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AM29F400BT-120EEB PDF预览

AM29F400BT-120EEB

更新时间: 2024-11-30 22:35:11
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
37页 483K
描述
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory

AM29F400BT-120EEB 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP包装说明:TSOP-48
针数:48Reach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.14Is Samacsys:N
最长访问时间:120 ns备用内存宽度:16
启动块:TOP命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,7
端子数量:48字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.06 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

AM29F400BT-120EEB 数据手册

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PRELIMINARY  
Am29F400B  
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)  
CMOS 5.0 Volt-only Boot Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Top or bottom boot block configurations  
available  
— 5.0 volt-only operation for read, erase, and  
program operations  
Embedded Algorithms  
— Minimizes system level requirements  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
Manufactured on 0.35 µm process technology  
— Compatible with 0.5 µm Am29F400 device  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
High performance  
— Access times as fast as 55 ns  
Minimum 1,000,000 program/erase cycles per  
Low power consumption (typical values at 5  
sector guaranteed  
MHz)  
Package option  
— 48-pin TSOP  
— 44-pin SO  
— 1 µA standby mode current  
— 20 mA read current (byte mode)  
— 28 mA read current (word mode)  
— 30 mA program/erase current  
Compatibility with JEDEC standards  
— Pinout and software compatible with single-  
power-supply Flash  
Flexible sector architecture  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
seven 64 Kbyte sectors (byte mode)  
— Superior inadvertent write protection  
Data# Polling and toggle bits  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
seven 32 Kword sectors (word mode)  
— Provides a software method of detecting  
program or erase operation completion  
— Supports full chip erase  
Ready/Busy# pin (RY/BY#)  
— Sector Protection features:  
— Provides a hardware method of detecting  
program or erase cycle completion  
A hardware method of locking a sector to  
prevent any program or erase operations within  
that sector  
Erase Suspend/Erase Resume  
Sectors can be locked via programming  
equipment  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
Hardware reset pin (RESET#)  
— Hardware method to reset the device to reading  
array data  
Publication# 21505 Rev: C Amendment/+2  
Issue Date: April 1998  

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