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AM29F400BB-90DGC1 PDF预览

AM29F400BB-90DGC1

更新时间: 2024-11-29 20:34:31
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路
页数 文件大小 规格书
11页 147K
描述
Flash, 512KX8, 90ns,

AM29F400BB-90DGC1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:DIE,
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.23
最长访问时间:90 ns其他特性:MIN 1000K WRITE CYCLE ;20 YEAR DATA RETENTION ;CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK
启动块:BOTTOM数据保留时间-最小值:20
JESD-30 代码:X-XUUC-N43JESD-609代码:e0
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:43字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8封装主体材料:UNSPECIFIED
封装代码:DIE封装形状:UNSPECIFIED
封装形式:UNCASED CHIP并行/串行:PARALLEL
峰值回流温度(摄氏度):240编程电压:5 V
认证状态:Not Qualified最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:30类型:NOR TYPE
Base Number Matches:1

AM29F400BB-90DGC1 数据手册

 浏览型号AM29F400BB-90DGC1的Datasheet PDF文件第2页浏览型号AM29F400BB-90DGC1的Datasheet PDF文件第3页浏览型号AM29F400BB-90DGC1的Datasheet PDF文件第4页浏览型号AM29F400BB-90DGC1的Datasheet PDF文件第5页浏览型号AM29F400BB-90DGC1的Datasheet PDF文件第6页浏览型号AM29F400BB-90DGC1的Datasheet PDF文件第7页 
SUPPLEMENT  
Am29F400B Known Good Die  
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)  
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 2  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Embedded Algorithms  
— 5.0 volt-only operation for read, erase, and  
program operations  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
— Minimizes system level requirements  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
Manufactured on 0.32 µm process technology  
— Compatible with 0.5 µm Am29F400 device  
Minimum 1,000,000 write cycle per sector  
High performance  
guaranteed  
— Acess time as fast as 70 ns  
Compatibility with JEDEC standards  
Low power consumption (typical values at  
— Pinout and software compatible with single-  
power-supply Flash  
5 MHz)  
— 1 µA standby mode current  
— Superior inadvertent write protection  
— 20 mA read current (byte mode)  
— 28 mA read current (word mode)  
— 30 mA program/erase current  
Data# Polling and toggle bits  
— Provides a software method of detecting program  
or erase operation completion  
Flexible sector architecture  
Ready/Busy# pin (RY/BY#)  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
seven 64 Kbyte sectors (byte mode)  
— Provides a hardware method of detecting  
program or erase cycle completion  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
seven 32 Kword sectors (word mode)  
Erase Suspend/Erase Resume  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
— Supports full chip erase  
— Sector Protection features:  
A hardware method of locking a sector to prevent  
any program or erase operations within that  
sector  
Hardware reset pin (RESET#)  
— Hardware method to reset the device to reading  
array data  
Sectors can be locked via programming  
equipment  
20-year data retention at 125°C  
Tested to datasheet specifications at  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
temperature  
Quality and reliability levels equivalent to  
Top or bottom boot block configurations  
standard packaged components  
available  
Publication# 21258 Rev: E Amendment/+2  
Issue Date: June 14, 1999  

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