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AM29F200AB-90DPC PDF预览

AM29F200AB-90DPC

更新时间: 2024-09-21 05:26:35
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
8页 120K
描述
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1

AM29F200AB-90DPC 数据手册

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SUPPLEMENT  
Am29F200A Known Good Die  
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)  
CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1  
DISTINCTIVE CHARACTERISTICS  
5.0 V ± 10% for read and write operations  
Top or bottom boot block configurations  
available  
— Minimizes system level power requirements  
Embedded Algorithms  
High performance  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
— 90 or 120 ns access time  
Low power consumption  
— 20 mA typical active read current (byte mode)  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
— 28 mA typical active read current for  
(word mode)  
Minimum 100,000 write/erase cycles guaranteed  
Compatible with JEDEC standards  
— 30 mA typical program/erase current  
— 1 µA typical standby current  
— Pinout and software compatible with  
single-power-supply flash  
Sector erase architecture  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
three 64 Kbyte sectors (byte mode)  
— Superior inadvertent write protection  
Data# Polling and Toggle Bit  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
three 32 Kword sectors (word mode)  
— Detects program or erase cycle completion  
Ready/Busy# output (RY/BY#)  
— Supports full chip erase  
— Hardware method for detection of program or  
erase cycle completion  
— Sector Protection features:  
A hardware method of locking a sector to  
prevent any program or erase operations within  
that sector  
Erase Suspend/Resume  
— Supports reading data from a sector not being  
erased  
Sectors can be locked via programming  
equipment  
Hardware RESET# pin  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
— Resets internal state machine to the reading  
array data  
Tested to datasheet specifications at  
temperature  
Quality and reliability levels equivalent to  
standard packaged components  
Publication# 21257 Rev: B Amendment/0  
Issue Date: December 1997  
1/13/98  

与AM29F200AB-90DPC相关器件

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AM29F200AB-90DPC1 AMD

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2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200AB-90DPC1 SPANSION

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Flash, 256KX8, 90ns
AM29F200AB-90DPD1 SPANSION

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Flash, 256KX8, 90ns
AM29F200AB-90DPE AMD

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AM29F200AB-90DPE1 AMD

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2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
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Flash, 256KX8, 90ns
AM29F200AB-90DPF1 SPANSION

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AM29F200AB-90DPI AMD

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2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200AB-90DPI1 AMD

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2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
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