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AM29F080B-150FIB PDF预览

AM29F080B-150FIB

更新时间: 2024-11-22 22:23:43
品牌 Logo 应用领域
超微 - AMD /
页数 文件大小 规格书
37页 426K
描述
8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

AM29F080B-150FIB 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP包装说明:SOP, TSSOP40,.8,20
针数:40Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.41最长访问时间:150 ns
其他特性:MINIMUM 1000000 PROGRAM/ERASE CYCLES命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G40
JESD-609代码:e0内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:16
端子数量:40字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:TSSOP40,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
反向引出线:YES部门规模:64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.06 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPEBase Number Matches:1

AM29F080B-150FIB 数据手册

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PRELIMINARY  
Am29F080B  
8 Megabit (1 M x 8-Bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
5.0 V ± 10%, single power supply operation  
Minimum 1,000,000 program/erase cycles per  
sector guaranteed  
Package options  
— 40-pin TSOP  
— Minimizes system level power requirements  
Manufactured on 0.35 µm process technology  
— Compatible with 0.5 µm Am29F080 device  
— 44-pin SO  
High performance  
Compatible with JEDEC standards  
— Access times as fast as 70 ns  
— Pinout and software compatible with  
single-power-supply Flash standard  
Low power consumption  
— 25 mA typical active read current  
— 30 mA typical program/erase current  
— Superior inadvertent write protection  
Data# Polling and toggle bits  
— 1 µA typical standby current (standard access  
time to active mode)  
— Provides a software method of detecting  
program or erase cycle completion  
Flexible sector architecture  
— 16 uniform sectors of 64 Kbytes each  
— Any combination of sectors can be erased.  
— Supports full chip erase  
Ready/Busy# output (RY/BY#)  
— Provides a hardware method for detecting  
program or erase cycle completion  
Erase Suspend/Erase Resume  
— Group sector protection:  
— Suspends a sector erase operation to read data  
from, or program data to, a non-erasing sector,  
then resumes the erase operation  
A hardware method of locking sector groups to  
prevent any program or erase operations within  
that sector group  
Hardware reset pin (RESET#)  
Temporary Sector Group Unprotect allows code  
changes in previously locked sectors  
— Resets internal state machine to the read mode  
Embedded Algorithms  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
— Embedded Program algorithm automatically  
writes and verifies bytes at specified addresses  
Publication# 21503 Rev: C Amendment/+1  
Issue Date: April 1998  

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