Datasheet > AM29F080

AM29F080

更新时间： 2024-11-03 23:29:31

品牌	Logo	应用领域
其他 - ETC		闪存
页数	文件大小	规格书
39页	136K
描述
Am29F080 - 8 Megabit (1.048.576 x 8-Bit) CMOS 5.0 Volt-only. Sector Erase Flash Memory

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AM29F080 数据手册

PRELIMINARY

Am29F080

8 Megabit (1,048,576 x 8-Bit) CMOS 5.0 Volt-only,

Sector Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■ 5.0 Volt ±10% for read and write operations

— Minimizes system level power requirements

■ Compatible with JEDEC-standards

■ Embedded Program™ Algorithms

— Automatically programs and veriﬁes data at

speciﬁed address

■ Data Polling andToggle Bit feature for detection

— Pinout and software compatible with

single-power-supply Flash

of program or erase cycle completion

■ Ready/Busy output (RY/BY)

— Superior inadvertent write protection

— Hardware method for detection of program or

erase cycle completion

■ Package Options

— 40-pin TSOP

■ Erase Suspend/Resume

— 44-pin PSOP

— Supports reading or programming data to a

■ Minimum 100,000 write/erase cycles guaranteed

■ High performance

sector not being erased

■ Low power consumption

— 85 ns maximum access time

■ Sector erase architecture

— Uniform sectors of 64 Kbytes each

— 30 mA maximum active read current

— 60 mA maximum program/erase current

■ Enhanced power management for standby

— Any combination of sectors can be erased.

Also supports full chip erase

mode

— <1 µA typical standby current

— Standard access time from standby mode

■ Hardware RESET pin

■ Group sector protection

— Hardware method that disables any combination

of sector groups from write or erase operations

(a sector group consists of 2 adjacent sectors of

64 Kbytes each)

— Resets internal state machine to the read mode

■ Embedded Erase™ Algorithms

— Automatically preprograms and erases the chip

or any sector

GENERAL DESCRIPTION

The Am29F080 is an 8 Mbit, 5.0 Volt-only Flash mem-

ory organized as 1 Megabyte of 8 bits. The 1 Mbyte of

data is divided into 16 sectors of 64 Kbytes for ﬂexible

erase capability.The 8 bits of data will appear on DQ0–

DQ7. The Am29F080 is offered in a 40-pin TSOP, or

44-pin PSOP package. This device is designed to be

programmed in-system with the standard system

The standard Am29F080 offers access times of 85 ns,

90 ns, 120 ns, and 150 ns allowing operation of high-

speed microprocessors without wait states. To

eliminate bus contention the device has separate chip

enable (CE), write enable (WE), and output enable

(OE) controls.

The Am29F080 is entirely command set compatible

with the JEDEC single-power-supply Flash standard.

Commands are written to the command register using

standard microprocessor write timings. Register

contents serve as input to an internal state-machine

which controls the erase and programming circuitry.

Write cycles also internally latch addresses and data

5.0 volt V

supply. 12.0 volt V is not required for

program or erase operations. The device can also be

reprogrammed in standard EPROM programmers.

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 19643 Rev: A Amendment/+1

Issue Date: April 1997

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中文翻译

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与AM29F080相关器件

型号	品牌	获取价格	描述	数据表
AM29F080-120EC	ETC	获取价格	x8 Flash EEPROM
AM29F080-120ECB	ETC	获取价格	x8 Flash EEPROM
AM29F080-120EE	ETC	获取价格	x8 Flash EEPROM
AM29F080-120EEB	ETC	获取价格	x8 Flash EEPROM
AM29F080-120EI	ETC	获取价格	x8 Flash EEPROM
AM29F080-120EIB	ETC	获取价格	x8 Flash EEPROM
AM29F080-120FC	ETC	获取价格	x8 Flash EEPROM
AM29F080-120FCB	ETC	获取价格	x8 Flash EEPROM
AM29F080-120FE	ETC	获取价格	x8 Flash EEPROM
AM29F080-120FEB	ETC	获取价格	x8 Flash EEPROM

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