Datasheet > AM29F016-150FCB

AM29F016-150FCB

更新时间： 2024-11-29 20:20:59

品牌	Logo	应用领域
飞索 - SPANSION		光电二极管内存集成电路
页数	文件大小	规格书
36页	224K
描述
Flash, 2MX8, 150ns, PDSO44, SOP-44

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技术参数
数据手册

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AM29F016-150FCB 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SOIC	包装说明：	TSSOP, TSSOP48,.8,20
针数：	44	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.8	Is Samacsys：	N
最长访问时间：	150 ns	命令用户界面：	YES
数据轮询：	YES	JESD-30 代码：	R-PDSO-G44
长度：	18.4 mm	内存密度：	16777216 bit
内存集成电路类型：	FLASH	内存宽度：	8
湿度敏感等级：	1	功能数量：	1
部门数/规模：	32	端子数量：	44
字数：	2097152 words	字数代码：	2000000
工作模式：	ASYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	2MX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP48,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	225	电源：	5 V
编程电压：	5 V	认证状态：	Not Qualified
就绪/忙碌：	YES	反向引出线：	YES
座面最大高度：	1.2 mm	部门规模：	64K
最大待机电流：	0.000005 A	子类别：	Flash Memories
最大压摆率：	0.04 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	切换位：	YES
类型：	NOR TYPE	宽度：	12 mm
Base Number Matches：	1

AM29F016-150FCB 数据手册

FINAL

Am29F016

16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only,

Sector Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■ 5.0 Volt ± 10% for read and write operations

— Minimizes system level power requirements

■ Compatible with JEDEC-standards

■ Embedded Program Algorithms

— Automatically programs and verifies data at

specified address

■ Data Polling and Toggle Bit feature for

detection of program or erase cycle

completion

— Pinout and software compatible with

single-power supply Flash

— Superior inadvertent write protection

■ 48-pin TSOP

■ Ready/Busy output (RY/BY)

— Hardware method for detection of program or

erase cycle completion

■ 44-pin SO

■ Minimum 100,000 write/erase cycles

■ Erase Suspend/Resume

guaranteed

— Supports reading or programming data to a

■ High performance

sector not being erased

— 70 ns maximum access time

■ Sector erase architecture

— Uniform sectors of 64 Kbytes each

■ Low power consumption

— 25 mA typical active read current

— 30 mA typical program/erase current

— Any combination of sectors can be erased.

Also supports full chip erase

■ Enhanced power management for standby

mode

■ Group sector protection

— <1 µA typical standby current

— Hardware method that disables any combination

of sector groups from write or erase operations

(a sector group consists of 4 adjacent sectors of

64 Kbytes each)

— Standard access time from standby mode

■ Hardware RESET pin

— Resets internal state machine to the read mode

■ Embedded Erase Algorithms

— Automatically pre-programs and erases the chip

or any sector

GENERAL DESCRIPTION

The Am29F016 is a 16 Mbit, 5.0 Volt-only Flash memory

organized as 2 Megabytes of 8 bits each. The 2 Mbytes

of data is divided into 32 sectors of 64 Kbytes for flexible

erase capability. The 8 bits of data appear on DQ0–DQ7.

The Am29F016 is offered in 48-pin TSOP and 44-pin SO

packages. This device is designed to be programmed

in-system with the standard system 5.0 Volt V_CCsupply.

12.0 Volt V_PPis not required for program or erase

operations. The device can also be reprogrammed in

standard EPROM programmers.

chip enable (CE), write enable (WE), and output

enable (OE) controls.

The Am29F016 is entirely command set compatible

with the JEDEC single-power supply Flash standard.

Commands are written to the command register using

standard microprocessor write timings. Register

contents serve as input to an internal state-machine

that controls the erase and programming circuitry.

Write cycles also internally latch addresses and data

needed for the programming and erase operations.

Reading data out of the device is similar to reading

from 12.0 Volt Flash or EPROM devices.

The standard Am29F016 offers access times of 70

ns, 90 ns, 120 ns, and 150 ns, allowing high-speed

microprocessors to operate without wait states. To

eliminate bus contention, the device has separate

The Am29F016 is programmed by executing the pro-

gram command sequence. This will invoke the Embed-

Publication# 18805 Rev: D Amendment/0

Issue Date: April 1997

12 3 4 5 6 7...36

中文翻译

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与AM29F016-150FCB相关器件

型号	品牌	获取价格	描述	数据表
AM29F016-150FE	ETC	获取价格	x8 Flash EEPROM
AM29F016-150FEB	ETC	获取价格	x8 Flash EEPROM
AM29F016-150FI	SPANSION	获取价格	Flash, 2MX8, 150ns, PDSO48, TSOP-48
AM29F016-150FI	AMD	获取价格	16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-150FIB	AMD	获取价格	16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-150SC	AMD	获取价格	16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-150SCB	AMD	获取价格	16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-150SCB	SPANSION	获取价格	Flash, 2MX8, 150ns, PDSO48, SOP-48
AM29F016-150SI	AMD	获取价格	16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-150SIB	AMD	获取价格	16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

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