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AM29DS323DB100WHI PDF预览

AM29DS323DB100WHI

更新时间： 2024-11-27 19:49:47
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路
页数 文件大小 规格书
51页 931K
描述
Flash, 4MX8, 100ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, FBGA-48

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AM29DS323DB100WHI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：6 X 12 MM, 0.80 MM PITCH, FBGA-48
针数：48Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.49最长访问时间：100 ns
备用内存宽度：16启动块：BOTTOM
JESD-30 代码：R-PBGA-B48JESD-609代码：e0
长度：12 mm内存密度：33554432 bit
内存集成电路类型：FLASH内存宽度：8
湿度敏感等级：3功能数量：1
端子数量：48字数：4194304 words
字数代码：4000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：4MX8封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：240编程电压：1.8 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：2.2 V最小供电电压 (Vsup)：1.8 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：TIN LEAD端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：30类型：NOR TYPE
宽度：6 mmBase Number Matches：1

AM29DS323DB100WHI 数据手册

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ADVANCE INFORMATION  
Am29DS323D  
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)  
CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory  
DISTINCTIVE CHARACTERISTICS  
ARCHITECTURAL ADVANTAGES  
■ Minimum 1 million write cycles guaranteed per sector  
■ Simultaneous Read/Write operations  
■ 20 Year data retention at 125°C  
— Data can be continuously read from one bank while  
executing erase/program functions in other bank  
— Reliable operation for the life of the system  
SOFTWARE FEATURES  
— Zero latency between read and write operations  
■ Data Management Software (DMS)  
■ Multiple bank architectures  
— AMD-supplied software manages data programming  
and erasing, enabling EEPROM emulation  
— Two devices available with different bank sizes (refer  
to Table 3)  
— Eases sector erase limitations  
■ Secured Silicon (SecSi) Sector: Extra 64 KByte sector  
■ Supports Common Flash Memory Interface (CFI)  
— Factory locked and identifiable: 16 bytes available for  
secure, random factory Electronic Serial Number;  
verifiable as factory locked through autoselect  
function. ExpressFlash option allows entire sector to  
be available for factory-secured data  
■ Erase Suspend/Erase Resume  
— Suspends erase operations to allow programming in  
same bank  
■ Data# Polling and Toggle Bits  
— Provides a software method of detecting the status of  
program or erase cycles  
— Customer lockable: Can be read, programmed, or  
erased just like other sectors. Once locked, data  
cannot be changed  
■ Unlock Bypass Program command  
— Reduces overall programming time when issuing  
multiple program command sequences  
■ Zero Power Operation  
— Sophisticated power management circuits reduce  
power consumed during inactive periods to nearly  
zero  
HARDWARE FEATURES  
■ Any combination of sectors can be erased  
■ Package options  
— 48-ball FBGA  
■ Ready/Busy# output (RY/BY#)  
— Hardware method for detecting program or erase  
cycle completion  
— 48-pin TSOP (contact AMD for availability)  
■ Top or bottom boot block  
■ Hardware reset pin (RESET#)  
■ Manufactured on 0.23 µm process technology  
■ Compatible with JEDEC standards  
— Hardware method of resetting the internal state  
machine to reading array data  
— Pinout and software compatible with  
single-power-supply flash standard  
■ WP#/ACC input pin  
— Write protect (WP#) function allows protection of two  
outermost boot sectors, regardless of sector protect status  
PERFORMANCE CHARACTERISTICS  
— Acceleration (ACC) function provides accelerated  
program times  
■ High performance  
— Access time as fast 100 ns  
■ Sector protection  
— Program time: 14 µs/word typical utilizing  
Accelerate function  
— Hardware method of locking a sector, either  
in-system or using programming equipment, to  
prevent any program or erase operation within that  
sector  
■ Ultra low power consumption (typical values)  
— 1 mA active read current at 1 MHz  
— 5 mA active read current at 5 MHz  
— Temporary Sector Unprotect allows changing data in  
protected sectors in-system  
— 200 nA in standby or automatic sleep mode  
Publication# 23480 Rev: A Amendment/0  
Issue Date: January 25, 2000  
This document contains information on a product under development at Advanced Micro Devices. The information  
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed  
product without notice.  
Refer to AMD’s Website (www.amd.com) for the latest information.  
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与AM29DS323DB100WHI相关器件

型号 品牌 获取价格 描述 数据表
AM29DS323DB100WHK SPANSION

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 		Flash, 4MX8, 100ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, FBGA-48
AM29DS323DB110 AMD

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 		32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Mem
AM29DS323DB110EF SPANSION

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 		Flash, 2MX16, 110ns, PDSO48, LEAD FREE, MO-142DD, TSOP-48
AM29DS323DB110EI AMD

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 		32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Mem
AM29DS323DB110EI SPANSION

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 		Flash, 2MX16, 110ns, PDSO48, MO-142DD, TSOP-48
AM29DS323DB110EIN AMD

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 		32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Mem
AM29DS323DB110EIN SPANSION

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 		Flash, 2MX16, 110ns, PDSO48, MO-142DD, TSOP-48
AM29DS323DB110WMF SPANSION

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 		Flash, 2MX16, 110ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
AM29DS323DB110WMI AMD

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 		32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Mem
AM29DS323DB110WMI SPANSION

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 		Flash, 2MX16, 110ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, FBGA-48

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