Datasheet > AM29DL642G90I

AM29DL642G90I

更新时间： 2024-01-12 03:21:03

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页数	文件大小	规格书
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描述
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo

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AM29DL642G90I 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	10.95 X 11.95 MM, 0.80 MM PITCH, PLASTIC, FBGA-63
针数：	63	Reach Compliance Code：	not_compliant
ECCN代码：	3A991.B.1.A	HTS代码：	8542.32.00.51
风险等级：	5.81	最长访问时间：	90 ns
启动块：	BOTTOM/TOP	命令用户界面：	YES
通用闪存接口：	YES	数据轮询：	YES
JESD-30 代码：	R-PBGA-B63	JESD-609代码：	e0
长度：	11.95 mm	内存密度：	134217728 bit
内存集成电路类型：	FLASH MODULE	内存宽度：	16
湿度敏感等级：	3	功能数量：	1
部门数/规模：	16,126	端子数量：	63
字数：	8388608 words	字数代码：	8000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	8MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	LFBGA
封装等效代码：	BGA63,8X12,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE, FINE PITCH	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	240	电源：	3/3.3 V
编程电压：	3.3 V	认证状态：	Not Qualified
就绪/忙碌：	YES	座面最大高度：	1.4 mm
部门规模：	4K,32K	最大待机电流：	0.00001 A
子类别：	Flash Memories	最大压摆率：	0.045 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	30	切换位：	YES
类型：	NOR TYPE	宽度：	10.95 mm

AM29DL642G90I 数据手册

Am29DL642G

128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only

Simultaneous Read/Write Flash Memory

This product has been retired and is not recommended for designs. For new and current designs, S29PL127J supersedes AM29DL642G as the factory-recommended migration path.

Please refer to the S29PL127J datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.

DISTINCTIVE CHARACTERISTICS

■ Two 64 Megabit (Am29DL640G) in a single 63-ball 12

x 11 mm Fine-pitch BGA package (features are

described herein for each internal Am29DL640G)

■ Flexible sector architecture

— Two hundred fifty-six 32 Kword sectors

■ Compatibility with JEDEC standards

■ Two Chip Enable inputs

— Except for the added CE2#, the Fine-pitch BGA is

pinout and software compatible with single-power

supply Flash

— Two CE# inputs to control selection of each internal

Am29DL640G devices

■ Single power supply operation

— Superior inadvertent write protection

■ Minimum 1 million erase cycle guarantee per sector

■ 63-ball Fine-pitch BGA Package

— 2.7 to 3.6 volt read, erase, and program operations

■ Simultaneous Read/Write operations

— Data can be continuously read from one bank while

executing erase/program functions in another bank.

SOFTWARE FEATURES

— Zero latency between read and write operations

■ Flexible Bank^TMarchitecture

■ Data Management Software (DMS)

— AMD-supplied software manages data programming,

enabling EEPROM emulation

— Read may occur in any of the three banks not being

written or erased.

— Eases historical sector erase flash limitations

— Four banks may be grouped by customer to achieve

desired bank divisions.

■ Supports Common Flash Memory Interface (CFI)

■ Erase Suspend/Erase Resume

■ Boot Sectors

— Suspends erase operations to allow reading from

other sectors in same bank

— Top and bottom boot sectors in the same device

— Any combination of sectors can be erased

■ SecSi™ (Secured Silicon) SectorSecSi^TM(Secured

■ Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

Silicon) Sector: Extra 256 Byte sector

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

HARDWARE FEATURES

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

— Customer lockable: One-time programmable only.

Once locked, data cannot be changed

■ High performance

■ Hardware reset pin (RESET#)

— Hardware method of resetting the internal state

machine to the read mode

— 70 or 90 ns access time

■ Manufactured on 0.17 µm process technology

■ CFI (Common Flash Interface) compliant

■ WP#/ACC input pin

— Write protect (WP#) function protects sectors 0, 1,

140, and 141, regardless of sector protect status

— Provides device-specific information to the system,

allowing host software to easily reconfigure for

different Flash devices

— Acceleration (ACC) function accelerates program

timing

■ Ultra low power consumption (typical values at 3.0 V,

■ Sector protection

5 MHz) for the part

— Hardware method of locking a sector, either

in-system or using programming equipment, to

prevent any program or erase operation within that

sector

— 10 mA typical active read current

— 15 mA typical erase/program current

— 400 nA typical standby mode current

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

Publication# 26503

Issue Date: June 10, 2005

Rev: B Amendment/+2

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM29DL642G90I相关器件

型号	品牌	描述	获取价格	数据表
AM29DL642G90MDI	AMD	128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo	获取价格
AM29DL800B	AMD	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me	获取价格
AM29DL800B_06	AMD	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me	获取价格
AM29DL800B-100EC	SPANSION	Flash, 1MX8, 100ns, PDSO48, TSOP-48	获取价格
AM29DL800B-100ED	SPANSION	Flash, 1MX8, 100ns, PDSO48, TSOP-48	获取价格
AM29DL800B-100EF	SPANSION	Flash, 1MX8, 100ns, PDSO48, TSOP-48	获取价格

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