5秒后页面跳转
AM29DL640G70 PDF预览

AM29DL640G70

更新时间: 2024-01-01 17:07:41
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
52页 1124K
描述
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory

AM29DL640G70 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.8
最长访问时间:70 ns备用内存宽度:8
启动块:BOTTOM/TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B63JESD-609代码:e0
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:3
部门数/规模:16,126端子数量:63
字数:4194304 words字数代码:4000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA63,8X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified就绪/忙碌:YES
部门规模:8K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.045 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM切换位:YES
类型:NOR TYPEBase Number Matches:1

AM29DL640G70 数据手册

 浏览型号AM29DL640G70的Datasheet PDF文件第1页浏览型号AM29DL640G70的Datasheet PDF文件第2页浏览型号AM29DL640G70的Datasheet PDF文件第4页浏览型号AM29DL640G70的Datasheet PDF文件第5页浏览型号AM29DL640G70的Datasheet PDF文件第6页浏览型号AM29DL640G70的Datasheet PDF文件第7页 
P R E L I M I N A R Y  
TABLE OF CONTENTS  
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4  
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 5  
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 6  
Special Handling Instructions for BGA Packages ..................... 6  
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8  
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 9  
Table 1. Am29DL640G Device Bus Operations ................................9  
Word/Byte Configuration .......................................................... 9  
Requirements for Reading Array Data .....................................9  
Writing Commands/Command Sequences ............................ 10  
Accelerated Program Operation ............................................. 10  
Autoselect Functions .............................................................. 10  
Simultaneous Read/Write Operations with Zero Latency ....... 10  
Standby Mode ........................................................................ 10  
Automatic Sleep Mode ........................................................... 11  
RESET#: Hardware Reset Pin ............................................... 11  
Output Disable Mode .............................................................. 11  
Table 2. Am29DL640G Sector Architecture ....................................11  
Table 3. Bank Address ....................................................................14  
Table 4. SecSiTM Sector Addresses ................................................14  
Autoselect Mode..................................................................... 14  
Table 5. Am29DL640G Autoselect Codes, (High Voltage Method) 15  
Sector/Sector Block Protection and Unprotection .................. 16  
Table 6. Am29DL640G Boot Sector/Sector Block Addresses for  
Protection/Unprotection ...................................................................16  
Write Protect (WP#) ................................................................ 17  
Table 7. WP#/ACC Modes ..............................................................17  
Temporary Sector Unprotect .................................................. 17  
Figure 1. Temporary Sector Unprotect Operation........................... 17  
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 18  
SecSi™ (Secured Silicon) Sector  
Erase Suspend/Erase Resume Commands ...........................26  
Figure 4. Erase Operation.............................................................. 26  
Table 12. Am29DL640G Command Definitions............................. 27  
Write Operation Status. . . . . . . . . . . . . . . . . . . . . 28  
DQ7: Data# Polling ................................................................. 28  
Figure 5. Data# Polling Algorithm .................................................. 28  
RY/BY#: Ready/Busy#............................................................ 29  
DQ6: Toggle Bit I .................................................................... 29  
Figure 6. Toggle Bit Algorithm........................................................ 29  
DQ2: Toggle Bit II ................................................................... 30  
Reading Toggle Bits DQ6/DQ2 ............................................... 30  
DQ5: Exceeded Timing Limits ................................................ 30  
DQ3: Sector Erase Timer .......................................................30  
Table 13. Write Operation Status ................................................... 31  
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 32  
Figure 7. Maximum Negative Overshoot Waveform ...................... 32  
Figure 8. Maximum Positive Overshoot Waveform........................ 32  
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 33  
Figure 9. ICC1 Current vs. Time (Showing Active and  
Automatic Sleep Currents)............................................................. 34  
Figure 10. Typical ICC1 vs. Frequency............................................ 34  
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 35  
Figure 11. Test Setup.................................................................... 35  
Figure 12. Input Waveforms and Measurement Levels ................. 35  
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 36  
Read-Only Operations ........................................................... 36  
Figure 13. Read Operation Timings............................................... 36  
Hardware Reset (RESET#) .................................................... 37  
Figure 14. Reset Timings............................................................... 37  
Word/Byte Configuration (BYTE#) ..........................................38  
Figure 15. BYTE# Timings for Read Operations............................ 38  
Figure 16. BYTE# Timings for Write Operations............................ 38  
Erase and Program Operations .............................................. 39  
Figure 17. Program Operation Timings.......................................... 40  
Figure 18. Accelerated Program Timing Diagram.......................... 40  
Figure 19. Chip/Sector Erase Operation Timings .......................... 41  
Figure 20. Back-to-back Read/Write Cycle Timings ...................... 42  
Figure 21. Data# Polling Timings (During Embedded Algorithms). 42  
Figure 22. Toggle Bit Timings (During Embedded Algorithms)...... 43  
Figure 23. DQ2 vs. DQ6................................................................. 43  
Temporary Sector Unprotect .................................................. 44  
Figure 24. Temporary Sector Unprotect Timing Diagram .............. 44  
Figure 25. Sector/Sector Block Protect and  
Flash Memory Region ............................................................ 19  
Hardware Data Protection ......................................................19  
Low VCC Write Inhibit ............................................................ 19  
Write Pulse “Glitch” Protection ............................................... 20  
Logical Inhibit .......................................................................... 20  
Power-Up Write Inhibit ............................................................ 20  
Common Flash Memory Interface (CFI) . . . . . . . 20  
Table 8. CFI Query Identification String.......................................... 20  
Table 9. System Interface String......................................................21  
Table 10. Device Geometry Definition ............................................ 21  
Table 11. Primary Vendor-Specific Extended Query ...................... 22  
Command Definitions . . . . . . . . . . . . . . . . . . . . . 23  
Reading Array Data ................................................................ 23  
Reset Command ..................................................................... 23  
Autoselect Command Sequence ............................................ 23  
Enter SecSi™ Sector/Exit SecSi Sector  
Unprotect Timing Diagram ............................................................. 45  
Alternate CE# Controlled Erase and Program Operations ..... 46  
Figure 26. Alternate CE# Controlled Write (Erase/Program)  
Operation Timings.......................................................................... 47  
Erase And Programming Performance. . . . . . . . 48  
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 48  
TSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 48  
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 48  
FBE063—63-Ball Fine-Pitch Ball Grid Array (FBGA)  
Command Sequence .............................................................. 23  
Byte/Word Program Command Sequence ............................. 24  
Unlock Bypass Command Sequence ..................................... 24  
Figure 3. Program Operation .......................................................... 25  
Chip Erase Command Sequence ........................................... 25  
Sector Erase Command Sequence ........................................ 25  
12 x 11 mm package .............................................................. 49  
LAA064—64-Ball Fortified Ball Grid Array (FBGA)  
13 x 11 mm package .............................................................. 50  
TS 048—48-Pin Standard TSOP ............................................51  
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 52  
June 7, 2002  
Am29DL640G  
3

与AM29DL640G70相关器件

型号 品牌 描述 获取价格 数据表
AM29DL640G70EE AMD 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me

获取价格

AM29DL640G70EEN AMD 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me

获取价格

AM29DL640G70EI AMD 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me

获取价格

AM29DL640G70EI SPANSION 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me

获取价格

AM29DL640G70EIN AMD 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me

获取价格

AM29DL640G70EIN SPANSION Flash, 4MX16, 70ns, PDSO48,

获取价格