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AM29DL164DB120PCF PDF预览

AM29DL164DB120PCF

更新时间： 2024-02-21 03:33:30
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
57页 1258K
描述
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

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AM29DL164DB120PCF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：BGA包装说明：TFBGA,
针数：48Reach Compliance Code：compliant
ECCN代码：3A001.A.2.CHTS代码：8542.32.00.51
风险等级：5.84最长访问时间：120 ns
其他特性：20 YEAR DATA RETENTION备用内存宽度：8
启动块：BOTTOM数据保留时间-最小值：20
JESD-30 代码：R-PBGA-B48JESD-609代码：e1
长度：9 mm内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：16
湿度敏感等级：3功能数量：1
端子数量：48字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：125 °C最低工作温度：-55 °C
组织：1MX16封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：260编程电压：3 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：MILITARY
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：40类型：NOR TYPE
宽度：8 mm

AM29DL164DB120PCF 数据手册

 浏览型号AM29DL164DB120PCF的Datasheet PDF文件第51页浏览型号AM29DL164DB120PCF的Datasheet PDF文件第52页浏览型号AM29DL164DB120PCF的Datasheet PDF文件第53页浏览型号AM29DL164DB120PCF的Datasheet PDF文件第54页浏览型号AM29DL164DB120PCF的Datasheet PDF文件第55页浏览型号AM29DL164DB120PCF的Datasheet PDF文件第57页 
Command Definitions  
Revision D (February 22, 2000)  
Table 14, Command Definitions: The SecSi Sector In-  
dicator Bit values have changed from 80h and 00h to  
81h and 01h, respectively.  
Global  
The Am29DL16x family has migrated to a new 0.23  
µm process technology, which is indicated by a “D” in  
the ordering part number. All references in this docu-  
ment have been changed to reflect the new process.  
AC Characteristics  
Read-only Operations table: Changed parameter tDF to  
16 ns for all speed options. Added Note 3.  
Distinctive Characteristics  
Revision D+2 (September 4, 2000)  
Under “Performance Characteristics,” the typical accel-  
erated programming time was changed to match the  
AC tables.  
Deleted remaining references to 80 ns speed option,  
which was officially removed in Revision D+1. Cor-  
rected references to Am29DL16xC, which officially  
changed to Am29DL16xD in Revision D.  
AC Characteristics  
Figure 17, Program Operations Timing; Figure 19,  
Chip/Sector Erase Operations: Deleted tGHWL and  
changed OE# waveform to start at high.  
Revision D+3 (November 22, 2000)  
Global  
Erase and Program Operations table; Alternate CE#  
Controlled Erase and Program Operations table:  
Changed the typical and maximum specifications for  
programming time.  
Deleted Preliminary status from document. Added  
table of contents.  
Revision E (July 2, 2001)  
Erase and Programming Performance  
Added Am29DL161D device to data sheet. Deleted  
extended temperature range devices.  
In the table, changed the typical and maximum specifi-  
cations for programming time. The typical and maxi-  
mum chip programming times in both byte and word  
modes are reduced.  
Sector/Sector Block Protection and Unprotection  
Noted that sectors are unprotected in parallel.  
Physical Dimensions  
SecSi‰ (Secured Silicon) Sector Flash  
Memory Region  
Replaced figures with more detailed illustrations.  
Noted changes for upcoming versions of these de-  
vices: reduced SecSi Sector size and deletion of  
SecSi Sector erase functionality. Current versions of  
these devices remain unaffected.  
Revision D+1 (June 21, 2000)  
Global  
Data sheet designation has changed from “Advance  
Information” to “Preliminary.”  
Revision E+1 (July 29, 2002)  
Deleted references to the 56-pin SSOP and the corre-  
sponding 70R speed option.  
Global  
Added 64-ball Fortified BGA package.  
Ordering Information  
Command Definitions  
Added valid combinations for the Am29DL164D device  
in TSOP. Added valid combinations for the  
Am29DL162D devices in TSOP and FBGA packages.  
Deleted valid combinations for the 80 ns  
Am29DL164D device in FBGA package.  
Modified caution to state that incorrect command/se-  
quences may place device in unknown state, upon  
which device must be reset.  
Unlock Bypass Command Sequence; Command  
Definitions table  
Device Bus Operations  
Table 3, Sector Addresses for Top Boot Sector De-  
vices: In note below table, corrected last device part  
number to top boot.  
Corrected table and description to indicated that bank  
address is not required for unlock bypass reset.  
Package Capacitance  
Table 7, Autoselect Codes: The SecSi Sector Indicator  
Bit values have changed from 80h and 00h to 81h and  
01h, respectively.  
Added BGA capacitance specifications.  
56  
Am29DL16xD  
May 26, 2004  
1...5354555657

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