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AM28F256-150JCB PDF预览

AM28F256-150JCB

更新时间： 2024-11-04 22:56:31
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路
页数 文件大小 规格书
35页 467K
描述
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

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中文翻译

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AM28F256-150JCB 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：QFJ
包装说明：QCCJ, LDCC32,.5X.6针数：32
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.89
最长访问时间：150 ns其他特性：BULK ERASE
命令用户界面：YES数据轮询：NO
耐久性：10000 Write/Erase CyclesJESD-30 代码：R-PQCC-J32
JESD-609代码：e0长度：13.97 mm
内存密度：262144 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：32字数：32768 words
字数代码：32000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：32KX8封装主体材料：PLASTIC/EPOXY
封装代码：QCCJ封装等效代码：LDCC32,.5X.6
封装形状：RECTANGULAR封装形式：CHIP CARRIER
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：5 V编程电压：12 V
认证状态：Not Qualified座面最大高度：3.556 mm
最大待机电流：0.0001 A子类别：Flash Memories
最大压摆率：0.03 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：J BEND端子节距：1.27 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：NO类型：NOR TYPE
宽度：11.43 mmBase Number Matches：1

AM28F256-150JCB 数据手册

 浏览型号AM28F256-150JCB的Datasheet PDF文件第2页浏览型号AM28F256-150JCB的Datasheet PDF文件第3页浏览型号AM28F256-150JCB的Datasheet PDF文件第4页浏览型号AM28F256-150JCB的Datasheet PDF文件第5页浏览型号AM28F256-150JCB的Datasheet PDF文件第6页浏览型号AM28F256-150JCB的Datasheet PDF文件第7页 
FINAL  
Am28F256  
256 Kilobit (32 K x 8-Bit)  
CMOS 12.0 Volt, Bulk Erase Flash Memory  
DISTINCTIVE CHARACTERISTICS  
■ High performance  
■ Latch-up protected to 100 mA  
from –1 V to V +1 V  
CC  
— 70 ns maximum access time  
■ Flasherase Electrical Bulk Chip-Erase  
■ CMOS Low power consumption  
— 30 mA maximum active current  
— 100 µA maximum standby current  
— No data retention power consumption  
— One second typical chip-erase  
■ Flashrite Programming  
— 10 µs typical byte-program  
— 0.5 second typical chip program  
■ Compatible with JEDEC-standard byte-wide  
■ Command register architecture for  
microprocessor/microcontroller compatible  
write interface  
32-Pin EPROM pinouts  
— 32-pin PDIP  
— 32-pin PLCC  
■ On-chip address and data latches  
— 32-pin TSOP  
■ Advanced CMOS flash memory technology  
— Low cost single transistor memory cell  
■ Automatic write/erase pulse stop timer  
■ 10,000 write/erase cycles minimum  
■ Write and erase voltage 12.0 V ±5%  
GENERAL DESCRIPTION  
The Am28F256 is a 256 K Flash memory organized as  
32 Kbytes of 8 bits each. AMD’s Flash memories offer  
the most cost-effective and reliable read/write non-  
volatile random access memory. The Am28F256 is  
packaged in 32-pin PDIP, PLCC, and TSOP versions. It  
is designed to be reprogrammed and erased in-system  
or in standard EPROM programmers. The Am28F256  
is erased when shipped from the factory.  
The AMD cell is designed to optimize the erase and  
programming mechanisms. In addition, the combina-  
tion of advanced tunnel oxide processing and low  
internal electric fields for erase and programming  
operations produces reliable cycling. The Am28F256  
uses a 12.0V±5% V  
high voltage input to perform  
PP  
the Flasherase and Flashrite algorithms.  
The highest degree of latch-up protection is achieved  
with AMD’s proprietary non-epi process. Latch-up  
protection is provided for stresses up to 100 milliamps  
The standard Am28F256 offers access times as fast as  
70 ns, allowing operation of high-speed microproces-  
sors without wait states. To eliminate bus contention,  
on address and data pins from –1 V to V  
+1 V.  
CC  
#
the Am28F256 has separate chip enable (CE ) and  
The Am28F256 is byte programmable using 10 µs  
programming pulses in accordance with AMD’s  
Flashrite programming algorithm. The typical room  
temperature programming time of the Am28F256 is a  
half a second. The entire chip is bulk erased using  
10 ms erase pulses according to AMD’s Flasherase  
alrogithm. Typical erasure at room temperature is  
accomplished in less than one second. The windowed  
package and the 15-20 minutes required for EPROM  
erasure using ultra-violet light are eliminated.  
#
output enable (OE ) controls.  
AMD’s Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
Am28F256 uses a command register to manage this  
functionality, while maintaining a standard JEDEC  
Flash Standard 32-pin pinout. The command register  
allows for 100% TTL level control inputs and fixed  
power supply levels during erase and programming.  
AMD’s Flash technology reliably stores memory  
contents even after 10,000 erase and program cycles.  
Publication# 11560 Rev: G Amendment/+2  
Issue Date: January 1998  
1234567...35

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